一种提高硅基OLED微显示器对比度的像素电路  

A New Pixel Circuit for High-contrast Ratio OLED-on-silicon Microdisplay

作　　者：杨淼[1] 张白雪[1] 陈建军[1] 曹允[1] 

机构地区：[1]南京电子器件研究所,国家平板显示工程技术研究中心,南京210016

出　　处：《固体电子学研究与进展》2015年第3期267-271 283,283,共6页Research & Progress of SSE

摘　　要：提出了一种应用于硅基有机发光二极管(Organic light emitting diode,OLED)微显示驱动芯片的新型像素单元电路,具有三个MOSFET和一个存储电容。相比传统的电压驱动像素单元电路,增加的一个MOSFET,可以根据输入数据的变化,自动调节其等效电阻,降低像素单元的最小输出电流。本像素电路能够在较宽的OLED公共阴极电压范围内维持很大的电流比率。该电路采用SMIC 0.35μm 2P4M混合信号工艺进行设计,目前已成功应用于一款分辨率为800×600,像素节距为15μm×15μm的硅基OLED驱动芯片,经测试验证,输出电流范围为280pA^65nA,可以同时满足OLED阵列高亮度和高对比度的要求。A new pixel circuit for organic light emitting diode on silicon microdisplay(OLEDoS)was presented.The proposed pixel circuit featured a 3-MOSFET structure and one storage capacitor.In contrast to the conventional voltage driving pixel circuit,a MOSFET was added in the proposed pixel circuit.The equivalent resistance of the added MOSFET was adjusted by the input voltage data automatically.Therefore,the minimum driving current of the pixel circuit was reduced.The proposed pixel circuit could still reached a high contrast ratio,especially in the OLED high-brightness applications.The circuit was designed and based on the SMIC 0.35μm mix-signal 2P4 M CMOS process.The proposed pixel circuit has been successfully applied in the driver chip of OLED on silicon with the high resolution of 800×600.The pitch of pixel is 15μm×15μm.The measured results of the pixel driving current are modulated between 280 pA and 65 nA,which can satisfy the high-brightness and high-contrast ratio requirements of the OLED array.

关 键 词：硅基有机发光二极管 微显示 像素单元电路 

分 类 号：TN873[电子电信—信息与通信工程]