Silicon high-speed binary phase-shift keying modulator with a single-drive push–pull high-speed traveling wave electrode  

作　　者：Jinting Wang Linjie Zhou Haike Zhu Rui Yang Yanyang Zhou Lei Liu Tao Wang Jianping Chen 

机构地区：[1]State Key Laboratory of Advanced Optical Communication Systems and Networks,Department of Electronic Engineering,Shanghai Jiao Tong University,Shanghai 200240,China [2]Transmission Technology Research Department,Huawei Technologies Co.Ltd.,Shenzhen 518129,China

出　　处：《Photonics Research》2015年第3期58-62,共5页光子学研究（英文版）

基　　金：supported in part by the National 973 Program of China (2011CB301700);the National 863 Program of China (2013AA014402);the National Natural Science Foundation of China (NSFC)(61127016,61107041,and 61422508);the Specialized Research Fund for the Doctoral Program of Higher Education of Ministry of Education (20130073130005)

摘　　要：We demonstrate binary phase shift keying(BPSK) modulation using a silicon Mach–Zehnder modulator with aπ-phase-shift voltage(Vπ) of-4.5 V.The single-drive push–pull traveling wave electrode has been optimized using numerical simulations with a 3 dB electro-optic bandwidth of 35 GHz.The 32 Gb/s BPSK constellation diagram is measured with an error vector magnitude of 18.9%.We demonstrate binary phase shift keying(BPSK) modulation using a silicon Mach–Zehnder modulator with aπ-phase-shift voltage(Vπ) of-4.5 V.The single-drive push–pull traveling wave electrode has been optimized using numerical simulations with a 3 dB electro-optic bandwidth of 35 GHz.The 32 Gb/s BPSK constellation diagram is measured with an error vector magnitude of 18.9%.

关 键 词：MZI BPSK Silicon high-speed binary phase-shift keying modulator with a single-drive push pull high-speed traveling wave electrode high wave 

分 类 号：TN761[电子电信—电路与系统]