Growth of large-area atomically thin MoS2 film via ambient pressure chemical vapor deposition  

作　　者：Caiyun Chen Hong Qiao Yunzhou Xue Wenzhi Yu Jingchao Song Yao Lu Shaojuan Li Qiaoliang Bao 

机构地区：[1]Institute of Functional Nano and Soft Materials(FUNSOM),Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices,and Collaborative Innovation Center of Suzhou Nano Science and Technology,Soochow University,Suzhou 215123,China [2]Department of Materials Engineering,Monash University,Clayton,Victoria 3800,Australia

出　　处：《Photonics Research》2015年第4期110-114,共5页光子学研究（英文版）

基　　金：the National High Technology Research and Development Program of China (863 Program) (Grant No.2013AA031903);the Youth 973 Program (Grant No.2015CB932700);the National Natural Science Foundation of China (Grant Nos.91433107, 51222208, and 51290273);the Doctoral Fund of Ministry of Education of China (Grant No.20123201120026);ARC DP (DP140101501);ARC DECRA (DE120101569);Victoria DSI top-up grant;the Natural Science Foundation of Jiangsu Province (No.BK20130328);China Postdoctoral Science Foundation (No. 2014M551654);Jiangsu Province Postdoctoral Science Foundation (No.1301020A)

摘　　要：Atomically thin MoS2 films have attracted significant attention due to excellent electrical and optical properties.The development of device applications demands the production of large-area thin film which is still an obstacle.In this work we developed a facile method to directly grow large-area MoS2 thin film on Si O2 substrate via ambient pressure chemical vapor deposition method. The characterizations by spectroscopy and electron microscopy reveal that the as-grown MoS2 film is mainly bilayer and trilayer with high quality. Back-gate field-effect transistor based on such MoS2 thin film shows carrier mobility up to 3.4 cm2V-1s-1 and on/off ratio of 105. The large-area atomically thin MoS2 prepared in this work has the potential for wide optoelectronic and photonic device applications.Atomically thin MoS2 films have attracted significant attention due to excellent electrical and optical properties.The development of device applications demands the production of large-area thin film which is still an obstacle.In this work we developed a facile method to directly grow large-area MoS2 thin film on Si O2 substrate via ambient pressure chemical vapor deposition method. The characterizations by spectroscopy and electron microscopy reveal that the as-grown MoS2 film is mainly bilayer and trilayer with high quality. Back-gate field-effect transistor based on such MoS2 thin film shows carrier mobility up to 3.4 cm2V-1s-1 and on/off ratio of 105. The large-area atomically thin MoS2 prepared in this work has the potential for wide optoelectronic and photonic device applications.

关 键 词：Mo Growth of large-area atomically thin MoS2 film via ambient pressure chemical vapor deposition area 

分 类 号：O484[理学—固体物理]