准原位X射线光电子能谱法分析薄膜半导体材料的环境失效行为  

Analysis of the Environmental Failure Behavior of Thin-film Semiconductor Materials Using in Quasi-in-Situ X-ray Photoelectron Spectroscopy

作　　者：李夏 郭佳睿 庄敏 陈瑜 白杰 严楷 LI Xia;GUO Jiarui;ZHUANG Min;CHEN Yu;BAI Jie;YAN Kai(Analysis and Test Center,Guangdong University of Technology,Guangzhou,Guangdong 510006,China;School of Materials and Energy,Guangdong University of Technology,Guangzhou,Guangdong 510006,China)

机构地区：[1]广东工业大学分析测试中心,广州510006 [2]广东工业大学材料与能源学院,广州510006

出　　处：《中国无机分析化学》2025年第1期150-158,共9页Chinese Journal of Inorganic Analytical Chemistry

基　　金：广东省基础与应用基础研究基金资助项目(2020A1515110992)。

摘　　要：处于使用和贮存状态的薄膜半导体材料因其经历的自然和诱导环境因素而引起器件的性能退化甚至失效,进而影响器件甚至整个系统的可靠性。目前对于环境失效行为的研究方法都很难捕获实时或准实时的表面成分及价态信息,难以判断其早期失效的行为特性以及深入掌握其失效机理。利用原位及准原位X射线光电子能谱(XPS)分析技术,通过调控环境失效因素研究薄膜半导体材料表界面成分、化学态以及电子结构的变化规律,揭示环境失效行为与失效机理,建立薄膜半导体相关材料及器件环境失效行为的分析新方法。结合准原位XPS对Au/Ni/Cu/HfO_(2)薄膜材料热过应力失效行为进行研究,结果表明:环境气氛中的氧气能够进一步诱导体相内Ni、Cu原子向表面层的扩散。热处理温度升高引起氧元素吸附模式由起初的物理吸附转变为化学吸附,并在Au层表面内反应产生NiO、Ni_(2)O_(3)以及CuO,导致薄膜材料表面成分的变化,表明利用准原位XPS法能够获取薄膜半导体材料准实时的表面成分及化学态信息,能更系统地剖析早期失效行为特性并分析其失效机理,对设备设计与生产过程中薄膜半导体材料体系的合理选择、设计改进以及提高电子芯片的环境适应性与可靠性具有重要意义。Thin-film semiconductor materials in use and storage are subjected to natural and induced environmental factors that cause degradation or even failure of the devices,thus affecting the reliability of the devices or even the whole system.Current research methods for environmental failure behavior are difficult to capture in-situ or quasi-in-situ surface composition and valence information,which makes it difficult to determine the behavior characteristics of early failure and grasp the failure mechanism in depth.Using in-situ and quasi-in-situ X-ray photoelectron spectroscopy(XPS)analysis techniques,the variation laws of surface and interface composition,chemical states and electronic structure of thin-film semiconductor materials were investigated by controlling environmental failure factors.The environmental failure behavior and failure mechanisms were revealed,and a new method for analyzing the environmental failure behavior of materials and devices related to thin-film semiconductor was established.The thermal overstress failure behavior of Au/Ni/Cu/HfO_(2)thin film materials was studied by quasi-in-situ XPS.The results indicated that the oxygen in the ambient atmosphere could further induce the diffusion of Ni and Cu atoms from the bulk phase to the surface layer.As the heat treatment temperature increased,the adsorption mode of oxygen changed from physical adsorption to chemical adsorption,and reactions occurred on the surface of the Au layer,producing NiO,Ni_(2)O_(3)and CuO,leading to changes in the surface composition of thin-film material.This case demonstrated that the quasi-in-situ XPS method could obtain the quasi-real-time surface composition and chemical state information of thin-film semiconductor materials and systematically analyze the characteristics and failure mechanism of the early failure behavior,which would be of great significance to the rational selection and design improvement of thin-film semiconductor material systems in the process of equipment design and production,as well as to impro

关 键 词：准原位X射线光电子能谱 环境失效 薄膜半导体 表面分析 扩散机理 

分 类 号：O657.62[理学—分析化学]