金刚石SBD及RF-DC电路应用研究  

Research on Application of Diamond SBD and RF-DC Circuits

作　　者：马源辰 任泽阳 李逸江 张金风[1] 许琦辉 苏凯 张进成[1] 郝跃[1] MA Yuanchen;REN Zeyang;LI Yijiang;ZHANG Jinfeng;XU Qihui;SU Kai;ZHANG Jincheng;HAO Yue(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Xidian University,Xi′an,710071,CHN;Xidian‑Wuhu Research Institute,Wuhu,Anhui,241002,CHN)

机构地区：[1]西安电子科技大学宽禁带半导体器件与集成技术全国重点实验室,西安710071 [2]西安电子科技大学芜湖研究院,安徽芜湖241002

出　　处：《固体电子学研究与进展》2024年第6期547-551,共5页Research & Progress of SSE

基　　金：国家重点研发计划项目(2022YFB3608601);国家自然科学基金面上项目(62374122);国家自然科学基金重大仪器项目(62127812)。

摘　　要：采用微波等离子体化学气相沉积设备对单晶金刚石衬底进行氢等离子体处理,形成氢终端金刚石表面空穴电导,制备氢终端肖特基二极管。二极管采用金作为阴极金属,铝作为肖特基金属。接着通过金线键合技术制备了RF-DC电路。二极管表现出良好的整流特性,在正向电压为-5 V时,电流大小为1.13 mA。RF-DC电路采用了双金刚石肖特基二极管,确保信号输入的全周期都能保持工作。在10 MHz频段下,成功将射频电压信号由7 V的交流电转变成平均电压为1.97 V的直流电,转换效率为13.3%,与仿真结果一致。实验结果表明了金刚石肖特基二极管应用于RF-DC电路的可行性。The single crystal diamond substrate was treated with hydrogen plasma by microwave plasma chemical vapor deposition(MPCVD) equipment,and the hole conductance on the surface of hydrogen-terminated diamond was formed to prepare hydrogen-terminated Schottky diodes.The diode used gold as the cathode metal and aluminum as the Schott group.Then the RF-DC circuit was prepared by gold wire bonding technique.The diode shows good rectification characteristics,with a current size of 1.13 mA at a forward voltage of-5 V.The RF-DC circuit uses a double diamond Schottky diode to ensure that the signal input can be maintained throughout the cycle.In the 10 MHz frequency band,the radio frequency voltage signal is successfully converted from 7 V AC to 1.97 V DC,and the conversion efficiency is 13.3%,which is consistent with the simulated results.The experimental results show that diamond Schottky diode is feasible for RF-DC circuit.

关 键 词：氢终端金刚石 肖特基二极管(SBD) RF-DC电路 整流特性 

分 类 号：TN304.18[电子电信—物理电子学] TN311.7