不同沉积温度Al_(2)O_(3)栅介质金刚石MOSFET器件研究  

Research on Diamond MOSFETs with Al_(2)O_(3) Gate Dielectrics Deposited at Different Temperatures

作　　者：谯兵 郁鑫鑫[1,2] 何适 陶然 李忠辉[1,2,3] 陈堂胜 QIAO Bing;YU Xinxin;HE Shi;TAO Ran;LI Zhonghui;CHEN Tangshen(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;CETC Key Laboratory of Carbon‑based Electronics,Nanjing,210016,CHN;National Key Laboratory of Solid‑state Microwave Devices and Circuits,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]中国电科碳基电子重点实验室,南京210016 [3]固态微波器件与电路全国重点实验室,南京210016

出　　处：《固体电子学研究与进展》2024年第6期552-555,602,共5页Research & Progress of SSE

摘　　要：采用原子层沉积(Atomic layer deposition,ALD)技术,在(001)晶面的单晶金刚石衬底上制备了不同沉积温度Al_(2)O_(3)栅介质的氢终端金刚石MOSFET器件。在200℃下沉积Al_(2)O_(3)栅介质的器件的饱和电流密度为291 mA/mm,当沉积温度升高至300℃时,器件的饱和电流密度大幅度提高至504 mA/mm,提高了73%。同时,升高沉积温度后,器件还具有更低的导通电阻、更高的跨导和更大的阈值电压,表明该器件具有更高的载流子浓度,这与300℃下沉积的Al_(2)O_(3)中具有更多的负电荷有关。对两种器件的小信号特性进行了研究,发现将ALD Al_(2)O_(3)的沉积温度从200℃升高至300℃后,器件的截止频率f_(T)和最大振荡频率f_(max)也得到了提升,表明采用高温ALD Al_(2)O_(3)沉积技术可以显著提升金刚石MOSFET器件的电流密度和频率性能。Hydrogen-terminated diamond MOSFETs with Al_(2)O_(3) gate dielectrics deposited at different temperatures by atomic layer deposition(ALD) technique have been fabricated on(001)-oriented single crystal diamond substrates.The device with gate dielectric deposited at 200℃ exhibited a saturation current density of 291 mA/mm.With the deposition temperature increased to 300℃,the saturation current density was significantly improved to 504 mA/mm,resulting in an increase of 73%.Additionally,by increasing the deposition temperature,the device demonstrated a lower on-resistance,a higher transconductance,as well as a larger threshold voltage,indicating the device has a higher carrier concentration.This phenomenon is primarily attributed to the presence of more negative charges in the Al_(2)O_(3) deposited at 300℃.The small-signal characteristics of the two kinds of devices were investigated,and it was found that the cut-off frequency f_(T) and the maximum oscillation frequency f_(max) were also improved with the deposition temperature of ALD Al_(2)O_(3) increased from 200℃ to 300℃.It implies that the current density and frequency performance of the diamond MOSFETs can be significantly improved by using the high temperature ALD Al_(2)O_(3) deposition technique.

关 键 词：金刚石 原子层沉积 氧化铝 温度 

分 类 号：TN385[电子电信—物理电子学] TN386.1