n型“SE+TOPCon”太阳电池硼扩散氧化推结过程中的湿氧化工艺研究  

STUDY ON WET OXIDATION PROCESS DURING BORON DIFFUSION OXIDATION PUSH JUNCTION PROCESS OF n-TYPE"SE+TOPCon"SOLAR CELLS

作　　者：陈骏 李兵 赵增超 申凯琳 刘湘祁 邓新新 Chen Jun;Li Bing;Zhao Zengchao;Shen Kailin;Liu Xiangqi;Deng Xinxin(Hunan Red Solar Photoelectricity Science and Technology Co.,Ltd.,National Engineering Research Center of Photovoltaic Equipment(NCPVE),Changsha 410000,China)

机构地区：[1]湖南红太阳光电科技有限公司,国家光伏装备工程技术研究中心,长沙410000

出　　处：《太阳能》2024年第12期72-78,共7页Solar Energy

摘　　要：为了探究湿氧化工艺在叠加选择性发射极(SE)技术的n型隧穿氧化层钝化接触(TOPCon)太阳电池(下文简称为“n型‘SE+TOPCon’太阳电池”)制备工艺中的作用,在制备此类太阳电池的硼扩散工艺氧化推结过程中增加了湿氧化工艺,通过实验对比干氧化工艺和湿氧化工艺,研究了湿氧化工艺对硼硅玻璃(BSG)层厚度,重掺杂区和轻掺杂区的方阻、硼掺杂浓度和结深,以及轻掺杂区钝化效果和重掺杂区接触效果的影响。研究结果表明:1)湿氧化工艺在1020℃工艺温度下生长的BSG层厚度可达到干氧化工艺在1050℃工艺温度下的水平,但湿氧化工艺的工艺温度降低了30℃,从而可显著降低能耗和延长石英制品的使用寿命。2)与干氧化工艺相比,湿氧化工艺得到的轻掺杂区的硼掺杂浓度略高、掺杂量较低、隐开路电压略高;重掺杂区的硼掺杂浓度略高且结深增加,进而改善了硅片的接触电阻率。3)采用湿氧化工艺制备的n型“SE+TOPCon”太阳电池的填充因子比采用干氧化工艺制备的提升了0.23%,其光电转换效率达到25.61%。This paper aims to explore the role of wet oxidation process in the preparation process of n-type TOPCon solar cells using stacked selective emitter(SE)technology(hereinafter referred to as"n-type'SE+TOPCon'solar cells").The wet oxidation process is added to the oxidation push junction process of boron diffusion technology in the preparation of such solar cells.Through experimental comparison of dry oxidation process and wet oxidation process,the influence of wet oxidation process on the thickness of BSG layer,the square resistance,boron doping concentration and junction depth of heavily doped and lightly doped regions,as well as the passivation effect of lightly doped region and the contact effect of heavily doped region are studied.The research results show that:1)The thickness of BSG layer grown by wet oxidation process at 1020℃process temperature can reach the level of dry oxidation process at 1050℃process temperature,but the process temperature of wet oxidation process is reduced by 30℃,which can significantly reduce energy consumption and extend the service life of quartz products.2)Compared with the dry oxidation process,the boron doping concentration in the lightly doped region obtained by the wet oxidation process is slightly higher,the doping amount is lower,and the hidden open circuit voltage is slightly higher.The boron doping concentration in the heavily doped region is slightly higher and the junction depth increases,thereby improving the contact resistivity of the silicon wafer.3)The filling factor of the n-type"SE+TOPCon"solar cell prepared by wet oxidation process is 0.23%higher than that prepared by dry oxidation process,and its photoelectric conversion efficiency reaches 25.61%.

关 键 词：TOPCon太阳电池 选择性发射极 湿氧化工艺 氧化推结 轻掺杂区 重掺杂区 方阻 光电转换效率 

分 类 号：TM914.41[电气工程—电力电子与电力传动]