外源硅对盐胁迫下棉花渗透物质含量和钠钾平衡的影响  

Effects of Exogenous Silicon on Levels of Osmotic Substances and Na/K Homeostasis in Cotton under Salt Stress

作　　者：阮思嘉 李磊磊 宋美珍[1,2] 亓倩 董强 张恒恒[1] 贵会平 王香茹[1,2] 张西岭 RUAN Sijia;LI Leilei;SONG Meizhen;QI Qian;DONG Qiang;ZHANG Hengheng;GUI Huiping;WANG Xiangru;ZHANG Xiling(Institute of Cotton Research of CAAS/National Engineering Research Centre of Cotton Biology Breeding and Industrial Technology,Anyang Henan 455000,China;Western Agricultural Research Center of Chinese Academy of Agricultural Sciences,Changji Xinjiang 831100,China;Rice Research Institute of Sichuan Agricultural University/Key Laboratory of Crop Ecophysiology and Cultivation,Chengdu 611130,China)

机构地区：[1]中国农业科学院棉花研究所/棉花生物育种及产业技术国家工程研究中心,河南安阳455000 [2]中国农业科学院西部农业研究中心,新疆昌吉831100 [3]四川农业大学水稻研究所/作物生理生态及栽培四川省重点实验室,成都611130

出　　处：《西北农业学报》2025年第1期35-44,共10页Acta Agriculturae Boreali-occidentalis Sinica

基　　金：棉花生物育种及产业技术国家工程研究中心自主课题(NERC010109);新疆维吾尔自治区自然科学基金(2020D01B61);第七师胡杨河市财政科技计划(2022C09)。

摘　　要：以陆地棉‘中J9807’(以下简称Z9807,耐盐材料)和‘中J0102’(以下简称Z0102,盐敏感材料)为试验材料开展温室水培试验,设置NaCl 0和150 mmol·L^(-1)两个盐浓度与Na 2 SiO 30和0.4 mmol·L^(-1)两个硅浓度,共8个处理。处理14 d后,测定棉花幼苗根系表型指标、叶片渗透调节物质含量、钠、钾含量及相关基因表达量。结果表明:盐胁迫显著降低了两个棉花材料根系的总根长、总表面积及总体积,外源硅的添加显著改善了根系的生长。施硅显著增加盐胁迫下棉花幼苗可溶性糖和可溶性蛋白含量,减轻盐引起的渗透胁迫。盐胁迫引起Na^(+)在棉花根系及地上部的大量积累,显著降低K+含量,导致Na/K比值增大。外源硅降低盐胁迫下两棉花材料地上部Na^(+)含量和Na/K,并显著降低耐盐材料Z9807地上部根系Na^(+)含量和Na/K比值,缓解盐胁迫引起的离子失衡。硅对盐敏感材料Z0102盐胁迫下离子稳态及耐盐能力的调节主要是通过显著上调SOS1和HKT1的表达,促进Na^(+)外排和区隔化,减少地上部Na^(+)的积累;而对耐盐品种的调节主要是下调HKT1的表达,减少了向地上的转运,并通过上调HAK5的表达促进高Na^(+)环境中K+的吸收,从而降低Na/K比值。综上,外源硅通过调节棉花幼苗中渗透调节物质含量,以及钾吸收、钠的外排和区隔化等关键基因的表达,提高棉花幼苗耐盐性。The salt-tolerant‘Zhong J9807’(Z9807)and the salt-sensitive‘Zhong J0102’(Z0102)of Gossypium hirsutum L.were used in greenhouse hydroponic experiments to investigate the effects of exogenous silicon on cotton under salt stress.Eight treatment combinations were tested:two NaCl concentrations(0 and 150 mmol·L^(-1))and two silicon concentrations(0 and 0.4 mmol·L^(-1)Na 2SiO 3).After 14 days of treatment,the root phenotype indicators,leaf osmolyte content,sodium(Na^(+))and potassium(K+)content,and expression levels of genes associated with root phenotype in the cotton seedlings were analyzed.The results showed that salt-induced stress significantly reduced the total root length,total surface area,total volume,in both cotton cultivars.However,exogenous silicon markedly improved root growth.The application of silicon alleviated salt-induced osmotic stress by significantly increasing the levels of soluble sugar and soluble protein in the seedlings.Salt-induced stress caused considerable accumulation of Na^(+)in the cotton roots and aboveground parts,significantly reduced the K+content,and,consequently,increased the Na^(+)/K+ratio.Exogenous silicon reduced the Na^(+)content and Na^(+)/K+ratio and thus mitigating ionic imbalance,particularly in the salt-tolerant Z9807 cultivar.In the salt-sensitive Z0102 cultivar,silicon treatment enhanced ionic homeostasis and salt tolerance by significantly upregulating SOS1 and NHX1 genes,which promoted Na^(+)efflux and compartmentalization,thereby decreasing Na^(+)accumulation in shoots.Conversely,in the salt-tolerant Z9807,downregulation of HKT1 expression limited Na^(+)transport to the aboveground parts,while the upregulation of HAK5 expression enhanced K+uptake in high-Na^(+)conditions,lowering the Na^(+)/K+ratio.These finding suggest that exogenous silicon enhances salt tolerance in cotton seedlings by regulating the osmolyte content and expression of key genes that are responsible for K+absorption,Na^(+)efflux,and compartmentalization.

关 键 词：硅 棉花 盐胁迫 钠钾平衡 渗透调节 

分 类 号：S562[农业科学—作物学]