面向MMC应用的大功率IGCT器件加速老化试验拓扑研究  

Study on Accelerated Aging Test Topology for High Power Semiconductor IGCT Devices Targeting MMC Applications

作　　者：朱鸿凡 吴锦鹏[1] 王鹏[1] 刘佳鹏 陈政宇 余占清[1] 赵彪[1] 曾嵘[1] ZHU Hongfan;WU Jinpeng;WANG Peng;LIU Jiapeng;CHEN Zhengyu;YU Zhanqing;ZHAO Biao;ZENG Rong(Department of Electrical Engineering,Tsinghua University,Haidian District,Beijing 100084,China)

机构地区：[1]清华大学电机工程与应用电子技术系,北京市海淀区100084

出　　处：《中国电机工程学报》2025年第1期266-276,I0022,共12页PROCEEDINGS OF THE CHINESE SOCIETY FOR ELECTRICAL ENGINEERING

基　　金：国家电网有限公司科技项目(5500-202199513A-0-5-ZN)。

摘　　要：集成门极换流晶闸管(integrated gate commutated thyristor, IGCT)具有阻断电压高、通流能力强等特点,在柔性直流输电等领域具有广阔的应用潜力,但其在高电压、大通流应力下的可靠性问题,成为限制应用的潜在因素,如何针对不同工况开展加速老化等效测试成为开展可靠性研究的关键瓶颈。文中以模块化多电平换流器(modular multilevel converter,MMC)工况为代表,针对IGCT器件可靠性等效测试难题开展研究。首先分析MMC工况下IGCT器件的暂态电气应力和长期电热应力,分别采用TCAD仿真软件与平均值等效计算模型定量获得IGCT器件在实际工况下的应力大小;其次,基于应力分析结果,提出一种三半桥式两级电流应力加速老化试验拓扑,设计并搭建2 500 V/4 000 A/150 Hz参数的IGCT加速老化试验平台;最后,开展约100 h高压、大电流老化运行试验,验证平台具备长时运行的能力,且等效测试应力达到设计要求。所提出的等效拓扑及其构建方法,不仅解决了MMC工况下IGCT器件的加速老化测试问题,对其他交直流变换工况、其他类型功率半导体亦有很好的参考价值。The integrated gate commutated thyristor(IGCT)has the advantages of high voltage-blocking and strong current-carrying capacity,making it a promising option for flexible direct current transmission and other applications.However,the reliability issue potentially hinders the further applications of the devices;especially,how to conduct the accelerated aging test under various application scenarios has become a key bottleneck.To address reliability testing of IGCT devices,this paper first analyzes the transient electrical stress and long-term electrical-thermal stress of IGCT devices under the modular multilevel converter(MMC)conditions,using TCAD simulation software and an average value equivalent calculation model to obtain the stress levels of IGCT devices under actual operating conditions.Second,a three-half-bridge two-stage current stress accelerated aging test topology is proposed.Based on the stress analysis results,a 2500 V/4000 A/150 Hz accelerated aging test platform for IGCT devices is designed and built.Finally,approximately 100hours of high-voltage,high-current aging tests are conducted,indicating that the system has the continuous operating capability and can exert the sufficient electrical-thermal stress.It is believed that the topology and the analysis method in this study not only solves the reliability-related testing issue of IGCT under MMC scenario,but also provides a good reference for other power semi-conductor devices under other scenarios.

关 键 词：集成门极换流晶闸管 可靠性 加速老化试验 电热应力 电力电子 

分 类 号：TM721[电气工程—电力系统及自动化]