一种低温漂高精度分段温度补偿带隙基准源电路  

A low⁃temperature drift high⁃precision segmented temperature compensated bandgap reference source circuit

作　　者：王宇飞 杨艳[1] 刘威[1,2,3,4] WANG Yufei;YANG Yan;LIU Wei(School of Physics and Technology,Wuhan University,Wuhan 430072,China;School of Microelectronics,Wuhan University,Wuhan 430072,China;Hubei Luojia Laboratory,Wuhan 430072,China;Wuhan Institute of Quantum Technology,Wuhan 430072,China)

机构地区：[1]武汉大学物理科学与技术学院,湖北武汉430072 [2]武汉大学微电子学院,湖北武汉430072 [3]湖北珞珈实验室,湖北武汉430072 [4]武汉量子技术研究院,湖北武汉430072

出　　处：《电子设计工程》2025年第2期1-6,共6页Electronic Design Engineering

基　　金：国家重点研发计划项目(2022YFA1402503);湖北珞珈实验室专项基金资助项目(220100025)。

摘　　要：基于TSMC 0.18μm CMOS工艺,提出了一种低温漂、高精度的分段温度补偿带隙基准源电路。该电路由启动电路、带隙基准核心电路和低温漂温度补偿电路组成。通过采用分段温度补偿方法,对一阶带隙基准电压温度曲线中的低温段和高温段分别进行补偿,从而显著降低了基准电压的温度系数,最终实现了低温度系数和高精度的带隙基准电压输出。仿真结果表明,当温度从-40℃变化至125℃时,采用分段温度补偿后的带隙基准电压温度系数大幅减小,从15.47×10^(-6)减小为1.141×10^(-6),有效提高了温度稳定性和电压精度。Based on the TSMC 0.18μm CMOS process,this design proposes a low temperature drift,high⁃precision segmented temperature compensation bandgap reference circuit.The circuit consists of a startup circuit,bandgap reference core circuit,and low temperature drift temperature compensation circuit.By adopting a segmented temperature compensation approach,the low⁃temperature and high⁃temperature segments of the first⁃order bandgap reference voltage temperature curve are individually compensated,significantly reducing the temperature coefficient of the reference voltage.This results in a bandgap reference voltage output with low temperature coefficient and high precision.Simulation results show that,when the temperature varies from-40℃to 125℃,the temperature coefficient of the bandgap reference voltage is significantly reduced from 15.47×10^(-6)to 1.141×10^(-6)after applying the segmented temperature compensation,effectively improving temperature stability and voltage accuracy.

关 键 词：带隙基准源 分段温度补偿 低温度系数 高精度 

分 类 号：TN40[电子电信—微电子学与固体电子学]