基于IPD工艺的高选择性带通滤波器设计  

Design of High-selectivity Bandpass Filter on IPD Technology

作　　者：李宗哲 王伟[1,2] 杨宋源 杨女燕 王省莲 张文 LI Zongzhe;WANG Wei;YANG Songyuan;YANG Nvyan;WANG Shenglian;ZHANG Wen(College of Physics and Electronic Information,Yunnan Normal University,Kunming 650500,China;Yunnan Key Laboratory of Optoelectronic Information Technology,Kunming 650500,China;Shaanxi Institute of Advanced Oeic Technologies Co.,Ltd,Xi’an 710065,China)

机构地区：[1]云南师范大学物理与电子信息学院,昆明650500 [2]云南省光电信息技术重点实验室,昆明650500 [3]陕西光电子先导院科技有限公司,西安710065

出　　处：《微波学报》2024年第S1期159-162,共4页Journal of Microwaves

基　　金：兴滇英才支持计划资助项目(00900208019916022)

摘　　要：现代通信技术的快速发展对射频滤波器的尺寸与性能提出了更高更严的要求。本文设计了一款采用GaAs IPD工艺的高选择性带通滤波器,将逆切比雪夫滤波器结构与多个谐振器结合以生成额外传输零点。对电路结构各部分原理进行了分析,采用ADS电磁仿真软件进行滤波器电路建模与仿真验证。仿真结果表明:该带通滤波器通带2.1~3.8 GHz,通带内最小插入损耗为2.4 dB,带外抑制在DC~1.3 GHz、5~10 GHz范围内优于38 dB,且通带两侧共有四个传输零点,具有较高的选择性。The rapid development of modern communication technology has put forward higher and more stringent requirements on the size and performance of RF filters.In this paper,a highly selective bandpass filter using GaAs IPD process is designed,combining the inverse Chebyshev filter structure with multiple resonators to generate additional transmission zeros.The operating principle of each circuit component is analyzed,and the filter circuit is modeled and verified by ADS electromagnetic simulation software.The simulation results show that the bandpass filter has a passband of 2.1~3.8 GHz with a minimum insertion loss of 2.4 dB.The out-of-band suppression exceeds 38 dB in the ranges of DC~1.3 GHz and 5~10 GHz.Furthermore,there are four transmission zeros present on both sides of the passband,thereby showcasing its high selectivity.

关 键 词：带通滤波器 集成无源器件 砷化镓 高选择性 

分 类 号：TN713.5[电子电信—电路与系统]