Ion implantation process and lattice damage mechanism of boron doped crystalline germanium  

晶体锗掺硼的离子注入工艺与晶格损伤机理研究

作　　者：HABIBA Um E CHEN Tian-Ye LIU Chi-Xian DOU Wei LIU Xiao-Yan LING Jing-Wei PAN Chang-Yi WANG Peng DENG Hui-Yong SHEN Hong DAI Ning HABIBA Um E;陈天业;刘赤县;窦伟;刘晓燕;凌静威;潘昌翊;王鹏;邓惠勇;沈宏;戴宁(中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083;中国科学院大学,北京100049;国科大杭州高等研究院物理与光电工程学院,浙江杭州310024;之江实验室,浙江杭州311100;上海科技大学物质科学与技术学院,上海201210)

机构地区：[1]State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]College of Physics and Optoelectronic Engineering,Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China [4]Zhejiang Laboratory,Hangzhou 311100,China [5]School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China

出　　处：《红外与毫米波学报》2024年第6期749-754,共6页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Key R&D Program of China(2023YFA1608701);National Natural Science Foundation of China(62274168,11933006,U2141240);Hangzhou Leading Innovation and Entrepreneurship Team(TD2020002)。

摘　　要：The response wavelength of the blocked-impurity-band(BIB)structured infrared detector can reach 200µm,which is the most important very long wavelength infrared astronomical detector.The ion implantation method greatly simplifies the fabrication process of the device,but it is easy to cause lattice damage,introduce crystalline defects,and lead to the increase of the dark current of detectors.Herein,the boron-doped germanium ion implantation process was studied,and the involved lattice damage mechanism was discussed.Experimental conditions involved using 80 keV energy for boron ion implantation,with doses ranging from 1×10^(13)cm^(-2)to 3×10^(15)cm^(-2).After implantation,thermal annealing at 450℃was implemented to optimize dopant activation and mitigate the effects of ion implantation.Various sophisticated characterization techniques,including X-ray dif⁃fraction(XRD),Raman spectroscopy,X-ray photoelectron spectroscopy(XPS),and secondary ion mass spec⁃trometry(SIMS)were used to clarify lattice damage.At lower doses,no notable structural alterations were ob⁃served.However,as the dosage increased,specific micro distortions became apparent,which could be attributed to point defects and residual strain.The created lattice damage was recovered by thermal treatment,however,an irreversible strain induced by implantation still existed at heavily dosed samples.阻挡杂质带结构红外探测器的响应波长可达200μm,是最重要的甚长波长红外天文探测器。离子注入方法简化了器件的制造过程,但容易造成晶格损伤,引入晶体缺陷,并导致探测器暗电流增加。文章对锗掺硼离子注入工艺进行了研究,并对晶格损伤机制进行了讨论。实验条件包括使用80keV能量进行硼离子注入,剂量范围为1×10^(13)cm^(2)至3×10^(15)cm^(2)。注入后,在450℃下进行热退火,以优化掺杂剂活化并减轻离子注入的影响。使用了各种表征技术,包括X射线衍射(XRD)、拉曼光谱、X射线光电子能谱(XPS)和二次离子质谱(SIMS)来表征其晶格损伤。在较低剂量下,未观察到明显的结构变化。然而,随着剂量的增加,特定的微观形变变得明显,这可能是由于点缺陷和残余应变造成的。热处理可以恢复产生的晶格损伤,但在高剂量下,注入引起的不可逆应变仍然存在。

关 键 词：boron doped germanium ion implantation lattice damage 

分 类 号：TN3[电子电信—物理电子学]