Strain-engineered rippling at the bilayer-MoS_(2) interface identified by advanced atomic force microscopy  

作　　者：Haoyu Dong Songyang Li Shuo Mi Jianfeng Guo Zhaxi Suonan Hanxiang Wu Yanyan Geng Manyu Wang Huiwen Xu Li Guan Fei Pang Wei Ji Rui Xu Zhihai Cheng 

机构地区：[1]Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-Nano Devices,Department of Physics,Renmin University of China,Beijing 100872,China [2]Key Laboratory of Quantum State Construction and Manipulation(Ministry of Education),Renmin University of China,Beijing 100872,China [3]Key Laboratory of Advanced Light Conversion Materials and Biophotonics,Department of Chemistry,Renmin University of China,Beijing 100872,China

出　　处：《Frontiers of physics》2024年第6期157-165,共9页物理学前沿(英文版)

基　　金：supported by the National Key R&D Program of China(MOST)(Grant Nos.2023YFA1406500 and 2018YFE0202700);the National Natural Science Foundation of China(NSFC)(Nos.21622304,61674045,11604063,11974422,and 12104504);the Strategic Priority Research Program(Chinese Academy of Sciences,CAS)(No.XDB30000000);the Fundamental Research Funds for the Central Universities and the Research Funds of Renmin University of China[Nos.21XNLG27(Z.C.)and 22XNH095(H.D.)];supported by the Outstanding Innovative Talents Cultivation Funded Programs 2023 of Renmin University of China.

摘　　要：The van der Waals interface structures and behaviors are of great impor-tance in determining the physical properties of two-dimensional atomic crystals and their heterostructures.The delicate interfacial properties are sensitively dependent on the mechanical behaviors of atomically thin films under external strain.Here,we investigated the strain-engineered rippling structures at the CVD-grown bilayer-MoS_(2) interface with advanced atomic force microscopy(AFM).The in-plane compressive strain is sequentially introduced into the 1L-substrate and 2L-1L interface of bilayer-MoS_(2) flakes via a fast-cooling process.The thermal strain-engi-neered rippling structures were directly visualized at the central 2H-and 3R-MoS_(2) bilayer regions with friction force microscopy(FFM)and bimodal AFM techniques.These rippling structures can be further artifi-cially manipulated into the beating-like rippling features and fully erased via the contact mode AFM scanning.Our results shed lights on the strain-engineered interfacial structures of two-dimensional materials and also inspire the further investigation on the interface engineering of their elec-tronicandoptical properties.

关 键 词：rippling INTERFACE strain-engineered atomic force microscopy transitionmetal dichalcogenides 

分 类 号：TG1[金属学及工艺—金属学]