碲镉汞雪崩光电探测器的发展与展望  

Development and Prospect for HgCdTe Avalanche Photoelectric Detectors

作　　者：管崇尚 邢伟荣[1] 周睿 李震[1] 姜梦佳 王丹 折伟林[1] GUAN Chong-shang;XING Wei-rong;ZHOU Rui;LI Zhen;JIANG Meng-jia;WANG Dan;SHE Wei-lin(The 11th Research Institute of China Electronics Technology Group Corporation,Beijing 100015,China)

机构地区：[1]中国电子科技集团公司第十一研究所,北京100015

出　　处：《红外》2025年第1期1-15,共15页Infrared

摘　　要：通过对现有的几类主流碲镉汞(HgCdTe)雪崩光电二极管(Avalanche Photodiode,APD)器件进行梳理,简要总结了目前国际上主流的APD器件发展路线,并分析了包括PIN、高密度垂直集成光电二极管(High-Density Vertically Integrated Photodiode,HDVIP)和吸收--倍增分离(Separated Absorption and Multiplication,SAM)型器件在内的主要APD器件的结构与性能特点。通过对比不同技术路线的器件优化思路和性能特点,对相关器件的持续发展进行了展望。目前SAM型器件是主流APD器件中暗电流抑制和高温工作性能最好的结构,能够实现高增益条件下的高灵敏度探测。这也为相关器件工艺的发展开辟了新方向。By combining the existing main types of mercury cadmium telluride(HgCdTe)avalanche photodiode(APD)devices,the current mainstream APD device development route in the world is briefly summarized,and the structures and performance characteristics of major APD devices,including PIN,high-density vertically integrated photodiode(HDVIP)and separated absorption and multiplication(SAM)devices,are analyzed.By comparing the device optimization ideas and performance characteristics of different technical routes,the sustainable development of related devices is prospected.At present,the SAM devices are the structures with the best dark current suppression and high-temperature operation performance among mainstream APD devices,which can achieve high-sensitivity detection under high-gain conditions.This also opened up a new direction for the development of related device processes.

关 键 词：碲镉汞 雪崩 增益 噪声 

分 类 号：TN315[电子电信—物理电子学]