双输出SiPM前置放大器设计与分析  

Preamplifier design and analysis for dual output silicon photomultiplier

作　　者：龙源 黄跃峰[1] 侯会良 陈永忠[1] LONG Yuan;HUANG Yuefeng;HOU Huiliang;CHEN Yongzhong(Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai 201800,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海应用物理研究所,上海201800 [2]中国科学院大学,北京100049

出　　处：《核技术》2025年第1期85-91,共7页Nuclear Techniques

基　　金：国家自然科学基金(No.12075308,No.11775290)资助。

摘　　要：为了适配闪烁体与硅光电倍增器(Silicon Photomultiplier,SiPM)耦合探测器的不同应用场景,设计了基于OPA855芯片的跨阻放大器(Transimpedance Amplifier,TIA)和电压反馈放大器(Voltage Feedback Amplifier,VFB)。理论设计上考虑了两类前置放大器的带宽和噪声问题,采用PSpice for TI软件仿真验证其可行性,并通过阶跃响应和噪声测量验证其性能参数。在室温条件下,采用SiPM耦合掺铈钆铝镓石榴石(Cerium-doped Gadolinium Aluminum Gallium Garnet,GAGG(Ce))探头对^(241)Am源进行系统测量。结果表明:跨阻放大器的带宽为101 MHz,低于电压反馈放大器的381 MHz,但其基线噪声σ_(noise)≈448.32μV优于电压反馈放大器的σ_(noise)≈680.96μV;电压反馈放大器和跨阻放大器分别满足GAGG(Ce)探头快输出脉冲上升沿时间(2 ns)和标准输出脉冲上升沿时间(20 ns)的带宽设计需求。两类前置放大器均可满足不同场景下对高带宽和低输入噪声的需求,并与SiPM不同的输出模式相匹配。受限于电路的固有噪声和SiPM的输入电容,设计的跨阻放大器适合于能量测量和小面积SiPM应用,而电压反馈放大器更适合时间测量和大面积SiPM阵列。[Background]In order to apply in different scenarios of silicon photomultiplier(SiPM)coupled scintillator detector,preamplifiers need to fulfill different requirements.[Purpose]This study aims to design highbandwidth,low-noise preamplifiers to adapt for different output modes of SiPM-coupled scintillator detector.[Methods]Based on OPA855 chip and consideration of bandwidth and noise,a transimpedance amplifier(TIA)and a voltage feedback amplifier(VFB)were designed.The amplifier circuits were simulated and analyzed using PSpice for TI software to obtain circuit parameters.Then,the signal response and noise baseline level were measured and analyzed by experimental test using ^(241)Am radioactive source and a sSiPM-coupled Cerium-doped Gadolinium Aluminum Gallium Garnet(GAGG(Ce))detector.[Results]Experimental results show that these preamplifiers have good gain stability,high-bandwidth and low-noise.TIA's bandwidth is 101 MHz,lower than VFB's 381 MHz,but its baseline noise level(σ_(noise)≈448.32μV)is better than that of the VFB's(σ_(noise)≈680.96μV).[Conclusions]For GAGG(Ce)detector,both VFB and TIA meet the bandwidth design requirements of 2 ns for fast output pulse and 20 ns for standard output pulse,respectively.Limited by the inherent noise of circuits and the input capacitance of SiPM,TIA is suitable for energy measurements and small-area SiPM applications,while VFB is more suitable for time measurements and large-area SiPM arrays.

关 键 词：硅光电倍增器 前置放大器 GAGG(Ce) 闪烁体探测器 噪声 

分 类 号：TL821[核科学技术—核技术及应用]