Nanoscale air channel devices-inheritance and breakthrough of vacuum tube  

作　　者：Baihong Chen Linjie Fan Jinshun Bi Zhiqiang Li Ziming Xu Sandip Majumdar 

机构地区：[1]Institute of Microelectronics of the Chinese Academy of Sciences,Beijing,100029,China [2]School of Integrated Circuits,Guizhou Normal University,Guiyang,Guizhou Province,550025,China [3]School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing,100049,China [4]Serampore Girls College,Hooghly,West Bengal 712201,India

出　　处：《Nano Materials Science》2024年第6期714-725,共12页纳米材料科学(英文版)

基　　金：funded by the National Key Research and Development Program(No.2022YFE0124200);the National Natural Science Foundation of China(No.U2241221);National Innovation Center of Radiation Applications(No.KFZC2021020501);Functional Materials and Devices Technology Innovation Team of Guizhou Province University,Qian Jiaoji(No.[2023]058).

摘　　要：The nanoscale air channel device(NACD)has recently gained significant attention as a novel vacuum electronic that can be fabricated through nanofabrication technologies.Here,the research and progress of the NACD since it was reviewed,with a focus on working mechanism analysis,nanofabrication technologies,device structure optimization,electrode materials and simulation approach.Furthermore,the application fields and future development of NACD were summarized and prospected.The NACDs are expected to surpass the physical limits of traditional solid transistors due to its advantages such as smaller heat loss,high-speed,resistance to harsh environments.

关 键 词：Vacuum electronics NANOGAP Simulation Emission mechanism Temperature resistance Radiation endurance 

分 类 号：TN9[电子电信—信息与通信工程]