High-performance self-driven broadband photoelectrochemical photodetector based on reduced graphene oxide/Bi_(2)Te_(3)heterojunction  

作　　者：Chenchen Zhao Yangyang Liu Dongbo Wang Wen He Bingke Zhang Jingwen Pan Zhi Zeng Donghao Liu Sihang Liu Shujie Jiao Xuan Fang Dan Fang Liancheng Zhao Jinzhong Wang 

机构地区：[1]School of Materials Science and Engineering,Harbin Institute of Technology,Harbin,150001,China [2]Changchun University Science and Technology,Sch Sci,State Key Lab High Power Semicond Lasers,Changchun,130022,China

出　　处：《Nano Materials Science》2024年第6期741-751,共11页纳米材料科学(英文版)

基　　金：supported by the National Key Research and Development Program of China(Grant No.2019YFA0705201);the National Natural Science Foundation of China(Grant No.U2032129).

摘　　要：Attributed to its excellent physicochemical properties,graphene(GR)has very active applications in the fields of catalysis,optoelectronic devices,and battery electrode materials.However,until now,regulating the type and density of carriers in GR is still crucial for its practical applications.Here,reduced graphene oxide(RGO)-Bi_(2)Te_(3)heterojunctions doped with different contents were prepared by a simple one-step method.The Bi_(2)Te_(3)materials containing different RGO were made into broadband(365–850 nm)photoelectrochemical-type detectors,and the effects of the doping amount of RGO on the optoelectronic behavior of the devices and the intrinsic operation mechanism of the devices were investigated in detail.The results show that the values of Iph/Idark,Ri,and D*of Bi_(2)Te_(3)/RGO heterojunction devices obtained with 1 mg of RGO doping are 412,6.072 mA/W,and 2.4061010 Jones,respectively.It is anticipated that this work will provide a research basis for future quantitative tuning of the performance of micro-nano devices by GR.

关 键 词：PHOTOELECTROCHEMICAL Bi_(2)Te_(3)/RGO heterojunctions Doping regulation Self-driven BROADBAND 

分 类 号：TB3[一般工业技术—材料科学与工程]