Manipulating polarization attenuation in NbS_(2)-NiS_(2)nanoflowers through homogeneous heterophase interface engineering toward microwave absorption with shifted frequency bands  

作　　者：Yiru Fu Yuping Wang Junye Cheng Yao Li Jing Wang Yongheng Jin Deqing Zhang Guangping Zheng Maosheng Cao 

机构地区：[1]School of Materials Science and Engineering,Qiqihar University,Qiqihar,161006,China [2]Department of Materials Science,Shenzhen MSU-BIT University,Shenzhen,Guangdong Province,517182,China [3]Department of Mechanical Engineering,Hong Kong Polytechnic University,Hung Hom,Kowloon,China [4]School of Materials Science and Engineering,Beijing Institute of Technology,Beijing,100081,China

出　　处：《Nano Materials Science》2024年第6期794-804,共11页纳米材料科学(英文版)

基　　金：supported by the National Natural Science Foundation of China(52372289,52102368,52072192 and 51977009);Regional Joint Fund for Basic Research and Applied Basic Research of Guangdong Province(No.2020A1515110905);Guangdong Special Fund for key Areas(20237DZX3042);Shenzhen Stable Support Project and the Fundamental Research Fund of Heilongjiang Provincial University(145309101)。

摘　　要：Homogeneous heterogeneous(heterophase)interfaces regulated with low energy barriers have a fast response to applied electric fields and could provide a unique interfacial polarization,which facilitate the transport of electrons across the substrate.Such regulation on the interfaces is effective in modulating electromagnetic wave absorbing materials.Herein,we construct NbS_(2)–NiS_(2)heterostructures with NiS_(2)nanoparticles uniformly grown in NbS_(2)hollow nanospheres,and such particular structure enhances the interfacial polarization.The strong electron transfer at the interface promotes electron transport throughout the material,which results in less scattering,promotes conduct ion loss and dielectric polarization relaxation,improves dielectric loss,and results in a good impedance matching of the material.Consequently,the absorbing band may be successful tuned.By regulating the amount of NiS_(2),the heterogeneous interface is finely alternated so that the overall wave-absorbing performance is shifted to lower frequencies.With a NiS_(2)content of 15 wt%and an absorber thickness of 1.84 mm,the minimum reflection loss at 14.56 GHz is53.1 dB,and the effective absorption bandwidth is 5.04 GHz;more importantly,the minimum reflection loss in different bands is20 dB,and the microwave energy absorption rate reaches 99%when the thickness is about 1.5–4.5 mm.This work demonstrates the construction of homogeneous heterostructures is effective in improving the electromagnetic absorption properties,providing guideline for the synthesis of highly efficient electromagnetic absorbing materials.

关 键 词：Interface engineering Electromagnetic wave absorption HETEROSTRUCTURES Interfacial polarization 

分 类 号：TB3[一般工业技术—材料科学与工程]