B/N掺杂单栅GFET的自洽模型研究  

Self-consistent model study of B/N-doped single-gate GFET

作　　者：刘杰[1] 王军[1] LIU Jie;WANG Jun(School of Information Engineering,Southwest University of Science and Technology,Mianyang 621010,China)

机构地区：[1]西南科技大学信息工程学院,四川绵阳621010

出　　处：《传感器与微系统》2025年第2期57-61,66,共6页Transducer and Microsystem Technologies

基　　金：国家自然科学基金资助项目(699010003);四川省教育厅科研基金重点资助项目(18ZA0502)。

摘　　要：建立了B/N掺杂单栅石墨烯场效应管(GFET)全工作区域下的漏极电流模型。利用自洽方法获取精确的电势-电荷关系,解决了建模过程中的多重对数问题。该模型明确捕捉到产生非零带隙和狄拉克(Dirac)点偏移对载流子片电荷密度和迁移率等参数的影响。此外,通过考虑相互作用参数和杂质浓度建立了一种半经典扩散迁移率模型。所提出的漏极电流模型和扩散迁移率模型的模拟数据与7.5%B-掺杂单栅GFET的实验数据具有良好的一致性,验证了方法的有效性。在不同掺杂浓度下,B/N掺杂单栅GFET漏极电流模型所预测的转移特性曲线与输出特性曲线表明,通过掺杂能够完全抑制单栅GFET的双极性行为,增强了输出饱和性,并提高了开关比。因此,B/N掺杂单栅GFET能够同时满足模拟/射频电路和数字电路的应用条件。The drain current model of B/N-doped single-gate graphene field effect transistor(GFET)in full operating region is established.The self-consistent method is used to obtain the accurate potential-charge relationship,which solves the problem of multiple logarithms in the modeling process.The model clearly captures the effects of non-zero band gap and Dirac point shift on carrier sheet charge density and mobility.In addition,a semi-classical diffusion mobility model is established by considering the interaction parameters and impurity concentration.The simulation data of the proposed drain current model and diffusion mobility model are in good agreement with the experimental data of 7.5%B-doped single gate GEFT,which verifies the effectiveness of the method.The predicted transfer characteristic curve and output characteristic curve of B/N-doped single-gate GFET drain current model at different doping concentrations show that the bipolar behavior of single-gate GFET can be completely suppressed by doping,the output saturation is enhanced,and the switching ratio is improved.Therefore,B/N-doped single-gate GFET can meet the application conditions of analog/RF circuits and digital circuits.

关 键 词：石墨烯场效应管 B/N掺杂 自洽方法 半经典扩散迁移率 

分 类 号：TN385[电子电信—物理电子学]