一种高鲁棒性低漏电亚谐波注入锁定环形振荡器电路设计  

Design of High Robustness Low-Leakage Subharmonic Injection-Locked Ring Oscillator

作　　者：盛旭阳 林敏[1] Sheng Xuyang

机构地区：[1]上海大学特种光纤与光接入网重点实验室,上海200444

出　　处：《工业控制计算机》2025年第1期146-148,共3页Industrial Control Computer

摘　　要：由于工作在射频频段的环形振荡器(Ring Oscillator,RO)存在漏电大和相噪性能差的问题,使其难以应用于高性能低功耗的片上电子系统中,提出了一种低漏电的射频环形振荡器电路架构,并利用亚谐波注入锁定(Subharmonic Injection Locking,SIL)技术提升其相噪性能。仿真结果表明,所提出的电路设计能确保环形振荡器在任意PVT变化下频率覆盖6.5~9 GHz,且亚谐波注入锁定后的相噪可降低至理论下限,最大漏电流与基准漏电流分为13μA与2.1μA,验证了所提电路架构的高性能与鲁棒性。Since the ring oscillator operating in the RF frequency band has the problems of large leakage current and poor phase noise performance,which makes it difficult to be applied in high-performance and low-power electronic systems,a low-leakage RF ring oscillator circuit architecture is proposed in this paper with subharmonic injection locking technique to improve its phase noise performance.Simulation results show that the proposed circuit design ensures that the ring oscillator frequency covers 6.5 ~9 GHz,while the phase noise after subharmonic injection locking can be reduced to the theoretical lower limit under various PVT conditions.The maximum and typical leakage current is 13 μA and 2.1 μA respectively,which verifies the high performance and robustness of the proposed circuit architecture.

关 键 词：环形振荡器 亚谐波注入锁定 低漏电 高鲁棒性 

分 类 号：TN752[电子电信—电路与系统]