SnX(X=S,Se)/P3HT复合薄膜的制备及其热电应用  

Preparation and thermoelectric application of SnX(X=S,Se)/P3HT composite films

作　　者：张继云 吴庆港 查柯宇 李继青 海杰峰 陆振欢 ZHANG Jiyun;WU Qinggang;ZHA Keyu;LI jiqing;HAI Jiefeng;LU Zhenhuan(Guangxi Key Laboratory of Electrochemical and Magneto-Chemical Functional Materials,College of Chemistry and Bioengineering,Guilin University of Technology,Guilin 541004,Guangxi,China)

机构地区：[1]桂林理工大学化学与生物工程学院,广西电磁化学功能物质重点实验室,广西桂林541004

出　　处：《精细化工》2025年第1期78-85,共8页Fine Chemicals

基　　金：国家自然科学基金项目(21962005);广西自然科学基金项目(2023GXNSFAA026425)。

摘　　要：将SnS纳米带或SnSe纳米片与聚(3-己基噻吩-2,5-二基)(P3HT)复合制备了两类无机/有机复合薄膜SnS/P3HT和SnSe/P3HT。采用XRD、SEM、EDS和Raman光谱对其进行了表征,考察了SnS或SnSe含量(以P3HT质量为基准,下同)对SnS/P3HT或SnSe/P3HT电导率、塞贝克系数和功率因子的影响,评价了SnS/P3HT复合薄膜在柔性热电器件中的应用。结果表明,SnS纳米带或SnSe纳米片与P3HT的复合均为物理混合。SnS(4%)/P3HT(SnS含量为4%)的功率因子最大,为3.33μW/(m·K^(2)),比P3HT薄膜〔2.80μW/(m·K^(2))〕提高了18.9%;SnSe纳米片在SnSe/P3HT中的分散性差,其团聚程度随SnSe含量的增加而增强,导致其电导率大幅度降低,未能提高功率因子。SnS(4%)/P3HT的柔性热电器件在外负载电阻为1.5 kΩ时的最大输出功率为16.7 nW;当弯曲半径为4 mm时,SnS(4%)/P3HT复合薄膜经过1000次的弯曲循环后,其电阻相对偏差值为23.15%。Inorganic/organic composite films SnS/poly(3-hexylthiophene-2,5-diyl)(P3HT)and SnSe/P3HT were synthesized from combination of SnS nanobelts and SnSe nanoflakes with P3HT,respectively,and characterized by XRD,SEM,EDS,and Raman spectra.The effects of SnS or SnSe content(based on the mass of P3HT,the same below)on conductivity,Seebeck coefficient,and power factor of the composite films were analyzed,and the application performance of SnS/P3HT composite film in flexible thermoelectric device was evaluated.The results indicated that the combination of SnS nanobelts or SnSe nanoflakes with P3HT was through physical mixing.SnS(4%)/P3HT(SnS content 4%)showed a power factor of 3.33μW/(m·K^(2)),18.9%higher than P3HT film[2.80μW/(m·K^(2))].The dispersion of SnSe nanoflakes in SnSe/P3HT was poor,and the agglomeration degree of SnSe nanoflakes increased with the increase of SnSe content,resulting in a significant decrease in the conductivity and failure to improve the power factor.Therefore,the SnSe/P3HT composite film had no value for thermoelectric applications.The maximum output power of the SnS(4%)/P3HT flexible thermoelectric device was 16.7 nW when the external load resistance was 1.5 kΩ;When the bending radius was 4 mm,the relative resistance deviation of SnS(4%)/P3HT composite film after 1000 times of bending cycles was 23.15%.

关 键 词：热电材料 SNS SnSe 聚(3-己基噻吩-2 5-二基) 复合薄膜 功能材料 

分 类 号：TB383.2[一般工业技术—材料科学与工程]