钽硅复合介质薄膜皮秒脉冲激光刻蚀机理研究  

Study on the Mechanism of Picosecond Pulsed Laser Etching of Tantalum-Silicon Composite Dielectric Films

作　　者：金聪 王子文 汪于涛 王丽 张骆 何宗泰 刘顿[1] Jin Cong;Wang Ziwen;Wang Yutao;Wang Li;Zhang Luo;He Zongtai;Liu Dun(Laser Group,School of Mechanical Engineering,Hubei University of Technology,Wuhan 430068,Hubei,China;Shanghai Key Laboratory of Laser Beam Micro Processing,Shanghai Institute of Laser Technology,Shanghai 200233,China)

机构地区：[1]湖北工业大学超快激光加工研究中心,湖北武汉430068 [2]上海市激光技术研究所有限公司,上海市激光束精细加工重点实验室,上海200233

出　　处：《应用激光》2024年第11期72-82,共11页Applied Laser

基　　金：省科技厅科研计划项目-重点研发计划(2021BAA172)。

摘　　要：针对钽硅复合介质薄膜表面精密刻槽需求,运用532 nm皮秒激光在钽硅复合介质薄膜表面进行刻蚀,利用光学显微镜、扫描电子显微镜、激光共聚焦显微镜和能谱仪分别对激光刻蚀后组织的显微形貌、元素成分进行分析。通过建立三维烧蚀模型对激光与钽硅复合介质薄膜作用的温度场进行分析。结果表明,当激光能量密度为3.24 J/cm^(2)时,可以在不损伤二氧化硅介质薄膜和基材的情况下将氧化钽介质薄膜有效去除,实现了具有可控深度的激光烧蚀加工。The 532 nm picosecond laser was used to etch the surface of the tantalum-silicon composite dielectric film for precision grooving.The microscopic morphology and elemental composition of the tissue after laser etching were analyzed using optical microscopy,scanning electron microscopy,laser confocal microscopy and energy spectrometry.A three-dimensional ablation model was established to analyze the temperature field of the laser interaction with the tantalum-silicon composite dielectric film.The results show that at a laser energy density of 3.24 J/cm^(2),the tantalum oxide dielectric film can be effectively removed without causing damage to the silica dielectric film or the substrate,thus achieving controlled-depth laser ablation processing.

关 键 词：钽硅复合介质薄膜 532 nm皮秒激光 数值模拟 激光刻蚀 

分 类 号：TN249[电子电信—物理电子学]