Completely annealing-free flexible Perovskite quantum dot solar cells employing UV-sintered Ga-doped SnO_(2) electron transport layers  

作　　者：Wooyeon Kim Jigeon Kim Dayoung Kim Bonkee Koo Subin Yu Yuelong Li Younghoon Kim Min Jae Ko 

机构地区：[1]Department of Chemical Engineering,Hanyang University,Seoul 04763,Republic of Korea [2]Institute of Photoelectronic Thin Film Devices and Technology,Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,Engineering Research Center of Thin Film Optoelectronics Technology(MoE),Nankai University,Tianjin 300350,China [3]Department of Chemistry,Kookmin University,Seoul 02707,Republic of Korea [4]Department of Battery Engineering,Hanyang University,Seoul 04763,Republic of Korea

出　　处：《npj Flexible Electronics》2024年第1期750-760,共11页npj-柔性电子(英文)

基　　金：supported by the National Research Foundation of Korea(NRF)grant(NRF-2022M3J1A1064315,NRF-2021R1A2C2094794);ERC Center funded by the Korea government(MSIT)(NRF-2022R1A5A1033719).

摘　　要：The electron transport layer(ETL)is a critical component in perovskite quantum dot(PQD)solar cells,significantly impacting their photovoltaic performance and stability.Low-temperature ETL deposition methods are especially desirable for fabricating flexible solar cells on polymer substrates.Herein,we propose a room-temperature-processed tin oxide(SnO_(2))ETL preparation method for flexible PQD solar cells.The process involves synthesizing highly crystalline SnO_(2) nanocrystals stabilized with organic ligands,spin-coating their dispersion,followed by UV irradiation.The energy level of SnO_(2) is controlled by doping gallium ions to reduce the energy level mismatch with the PQD.The proposed ETL-based CsPbI_(3)-PQD solar cell achieves a power conversion efficiency(PCE)of 12.70%,the highest PCE among reported flexible quantum dot solar cells,maintaining 94%of the initial PCE after 500 bending tests.Consequently,we demonstrate that a systemically designed ETL enhances the photovoltaic performance and mechanical stability of flexible optoelectronic devices.

关 键 词：ETL quantum ANNEALING 

分 类 号：TP3[自动化与计算机技术—计算机科学与技术]