Phase transition and electrical conversion properties of Ge/Sb nano-multilayer films on flexible substrates  

作　　者：Cheng Wang Yifeng Hu Li Li 

机构地区：[1]School of Mathematics and Physics,Jiangsu University of Technology,Changzhou 213000,China [2]Jincheng Research Institute of Opo-mechatronics Jincheng,48000 Jincheng,China [3]Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems,Jincheng 48000,China

出　　处：《npj Flexible Electronics》2024年第1期891-899,共9页npj-柔性电子(英文)

基　　金：supported by National Natural Science Foundation of China(No.11974008);the Open Project Program of Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems(No.2023SZKF20);Postgraduate Research and Practice Innovation Program of Jiangsu University of Technology(XSJCX23_26).

摘　　要：Flexible information memory is the key component of flexible electronic devices and the core of intelligent wearable devices.In this paper,Ge/Sb multilayer phase change films of various thickness ratios were prepared using polyether ether ketone as substrate,and their flexible phase change properties and device conversion characteristics were studied.After bending for 100000 times and bending experiments with different bending radius,the film can still realize the transition from amorphous to crystalline states,and the resistance fluctuation was small.Bending,stretching and pressing of the film resulted in grain refinement and increasing of crystalline resistance.The flexible electronic devices using Ge/Sb multilayer films were prepared.The phase change memory device can realize reversible conversion between SET and RESET states with different pulse widths in flat,bent states and after bending many times.All findings show that Ge/Sb multilayer films on PEEK substrate have broad application prospects in high-performance flexible memory in the future.

关 键 词：MULTILAYER BENDING TRANSITION 

分 类 号：TG1[金属学及工艺—金属学]