II-nitride MQW-based optoelectronic sensors for multifunctional environmental monitoring  

作　　者：Xumin Gao Dongmei Wu Tianlong Xie Jialei Yuan Mingyuan Xie Yongjin Wang Haitao Zhao Gangyi Zhu Zheng Shi 

机构地区：[1]GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province,Nanjing University of Posts and Telecommunications,Nanjing 210003,China [2]School of Internet of Things,Nanjing University of Posts and Telecommunications,Nanjing 210003,China

出　　处：《Chip》2024年第4期53-58,共6页芯片(英文)

基　　金：supported by the National Natural Science Foundation of China(62274096);Natural Science Research of Jiangsu Higher Education Institutions of China(22KJA510003);National Natural Science Foundation of China(92367302);Jiangsu Natural Science Foundation for Distinguished Young Scholars(BK20220054).

摘　　要：This work presents an integrated multi-quantum well (MQW)optoelectronic sensor leveraging III-nitride materials for multifunctionality on a monolithic chip. The sensor was fabricated usingstandard microfabrication techniques and adopted the identicalInGaN/GaN MQWs, which enables simultaneous emission anddetection. The sensor is featured with a double concentric circlestructure which supports both on-chip and off-chip detectionmechanisms, being capable of detecting environmental parameterslike rotational speed, proximity, and sucrose concentration. It exhibits stable photocurrent response to rotational speed up to8000 rpm, a 3 cm vertical detection range, and a linear responsewith 3.9 nA/% sensitivity to changes in sucrose concentration,which demonstrates the potential for diverse applications in industrial and biomedical fields.

关 键 词：InGaN/GaN MQW Light-emitting diode PHOTODETECTOR Concentric circle structure Monolithic integration 

分 类 号：TN3[电子电信—物理电子学]