On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters  

作　　者：Feifei Qin Xueyao Lu Xiaoxuan Wang Chunxiang Guo Jiaqi Wu Xuefeng Fan Mingming Jiang Peng Wan Junfeng Lu Yongjin Wang Gangyi Zhu 

机构地区：[1]GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province,Nanjing University of Posts and Telecommunications,Nanjing 210003,China [2]State Key Laboratory of Digital Medical Engineering,School of Biological Science and Medical Engineering,Southeast University,Nanjing 210096,China [3]Jiangsu Leuven Instruments Co.,Ltd.,Liaohe West Road 8,Pizhou 221300,Jiangsu,China [4]College of Physics,MIIT Key Laboratory of Aerospace Information Materials and Physics,Key Laboratory for Intelligent Nano Materials and Devices,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China

出　　处：《Chip》2024年第4期59-67,共9页芯片(英文)

基　　金：supported by the Natural Science Foundation of Jiangsu Province(No.BK20210593);the National Natural Science Foundation of China(No.62204127);Open Fund of Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education NJ2024001.

摘　　要：Featured with light emission and detection coexistence phenomenon,nitride-based multiple-quantum-well(MQW)diodes integrated chip has been proven to be an attractive structure for application prospects in variousfields such as lighting,sensing,optical communication,and otherfields.However,most of the recent reports are based on planar structures.Three-dimensional(3D)structures are endowed with extra advantages in direction,polarization,and absorption modulation and may pioneer a new way to make the same thing over and over again with interesting properties.In this paper,we designed and fabricated a singlecantilever InGaN/GaN MQW diode with warped 3D microstructure via standard microfabrication technology.Experimental results indicate that the strain architecture of the multi-layer materials is the key principle for the self-warped device.The planar structure will bear greater compressive stress while the warped beam part has less stress,which results in differences in the optical and electrical performance.The strain-induced band bending highly influences the emission and detection properties,while the warped structure will introduce direction selectivity to the 3D device.As an emitter,3D structures exhibit a directional emission with lower turn-on voltage,higher capacitance,increased luminous intensity,higher external quantum efficiency(EQE),high–3 dB bandwidth,and redshifted peak wavelength.Besides,it can serve as an emitter for directional-related optical communication.As a receiver,3D structures have lower darkcurrent,higher photocurrent,and red-shifted response spectrum and also show directional dependence.Thesefindings not only deepen the understanding of the working principle of the singlecantilever GaN devices but also provide important references for device performance optimization and new applications in visible light communication(VLC)technology.

关 键 词：Three-dimensional device Self-warped structures Single cantilever GaN light-emitting diode Directional emission and detection 

分 类 号：TN3[电子电信—物理电子学]