A versatile optoelectronic device for ultrasensitive negative-positive pressure sensing applications  

作　　者：Xiaoshuai An Sizhe Gui Yingxin Li Zhiqin Chu Kwai Hei Li 

机构地区：[1]School of Microelectronics,Southern University of Science and Technology,Shenzhen 518055,China [2]Department of Electrical and Electronic Engineering,The University of Hong Kong,Pokfulam Road,Hong Kong 999077,China [3]School of Biomedical Sciences,The University of Hong Kong,Pokfulam Road,Hong Kong 999077,China

出　　处：《Chip》2024年第4期68-75,共8页芯片(英文)

基　　金：supported in part by the National Natural Science Foundation of China under Grant 12074170;in part by the Shenzhen Fundamental Research Program under Grant JCYJ20220530113201003,and in part by HKU Seed Fund.

摘　　要：A versatile optoelectronic device with ultrasensitive negativepositive pressure sensing capabilities,which is integrated with a wireless monitoring system,was fabricated and demonstrated in the current work.The device comprises a monolithic GaN chip with a polydimethylsiloxane cavity and nanograting,which effectively transduces pressure stimuli into optical changes detected by the GaN chip.The developed device exhibits an ultra-low detection limit for a mass of 0.03 mg,a pressure of 2.94 Pa,and a water depth of 0.3 mm,with a detection range of−100 kPa to 30.5 kPa and high stability.The versatility of the device is demonstrated by its ability to monitor heart pulse,grip strength,and respiration.Its integration with a wireless data transmission system enables realtime monitoring of human activity and heart rate underwater,making it suitable for precise measurements in various practical applications.

关 键 词：Optoelectronic devices Integrated optoelectronics Pressure measurement 

分 类 号：TN3[电子电信—物理电子学]