Electroactive and Self-healing Polyurethane Doped Tin Oxide Interlayers for Efficient Organic Solar Cells  

作　　者：Xu Wang Jing Tian Zuhao You Le Lei Aokang Ge Yao Liu 

机构地区：[1]State Key Laboratory of Chemical Resource Engineering,Advanced Innovation Center for Soft Matter Science and Engineering,Beijing Universityof Chemical Technology,Beijing 100029,China

出　　处：《Chinese Journal of Chemistry》2024年第23期2979-2986,共8页中国化学(英文版)

基　　金：support from the National Natural Science Foundation of China(NSFC)(U21A20101 and 21875018)。

摘　　要：Tin oxide(SnO_(2))has been widely used as an electron transport layer(ETL)in optoelectronic devices.However,there are numerous surface or bulk defects in SnO_(2),working as charge recombination centers to degrade device.Here,an electroactive and self-healing polyurethane(PHNN)was designed by integrating conjugated unit-naphthalene diimide(NDI)into a typical polyurethane backbone.Numerous hydrogen bonds andπinteractions in PHNN work as non-covalent interactions to endow this polymer with superior self-healing properties.PHNN contains lots of aliphatic amine and carbonyl groups,which effectively passivate the defects in SnO_(2).Theπstacking of NDI units will facilitate electron delocalization,endowing PHNN with electrical activity compared with traditional polyurethane.Doping SnO_(2)with PHNN can improve the conductivity and reduce the work function of SnO_(2)layer,which is conducive to efficient charge extraction and transport.Using PHNN doped SnO_(2)as ETL for PM6:Y6 and PM6:BTP-eC9 based inverted organic solar cells can achieve a high efficiency of 17.16%and 17.51%,respectively.Devices containing doped SnO_(2)ETL show significantly improved efficiency and stability.Thus,the electroactive polyurethane doped SnO_(2)interlayers show high performance interfacial modification to align energy-levels in solar cell devices,which have promising applications in organic electronics.

关 键 词：Organic solar cells Self-healing polyurethane Doped tin oxide Interface engineering Electron transport layer Charge extraction and recombination Charge transport Defect passivation 

分 类 号：TM914.4[电气工程—电力电子与电力传动]