基于SiIGBT与SiCFET并联的新型混合器件特性解析及对比研究  

CHARACTERIZATION AND COMPARISON RESEARCH OF NOVEL HYBRID SWITCH WITH SI IGBT AND SIC FET IN PARALLEL

作　　者：朱梓贤 涂春鸣[1] 肖标 郭祺[1] 肖凡[1] 龙柳 Zhu Zixian;Tu Chunming;Xiao Biao;Guo Qi;Xiao Fan;Long Liu(National Engineering Research Center for Power Conversion and Control,Hunan University,Changsha 410082,China)

机构地区：[1]国家电能变换与控制工程技术研究中心(湖南大学),长沙410082

出　　处：《太阳能学报》2025年第1期251-260,共10页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(52130704)。

摘　　要：对由SiC FET与Si IGBT并联组成的新型混合器件(HY_F)开展研究。首先,分析HY_F的基本结构与工作原理,并搭建HY_F的导通损耗模型、开通损耗模型以及关断损耗模型。其次,基于混合器件的仿真模型,分析HY_F与传统Si IGBT/SiC MOSFET混合器件(HY_M)在不同额定电流等级下损耗与成本的优劣势。仿真结果表明,当额定电流为较小(15 A)时,HY_M能以较低的成本实现更低的损耗;混合器件在额定电流较大(25 A、40 A)时,HY_F能以更低的成本实现更低的损耗。最后,通过实验验证结论的正确性。In this paper,a novel hybrid switch(HY_F)composed of SiC FET and Si IGBT in parallel is studied.Firstly,the basic structure and working principle of HY_F are analyzed,and the conduction loss model,turn-on loss model and turn-off loss model are built.Secondly,based on the simulation model of the hybrid switch,the advantages and disadvantages of the loss and cost of HY_F and conventional Si IGBT/Si MOSFET hybrid switch(HY_M)at different rated current levels are analyzed.The simulation results show that HY_M can achieve lower loss at lower cost when the rated current is small(15 A),HY_F can achieve lower loss at lower cost when the rated current of hybrid switches is large(25 A,40 A).Finally,the correctness of the conclusions is verified experimentally.

关 键 词：Si/SiC混合器件 SiCMOSFET SiIGBT SiCFET 损耗模型 

分 类 号：TM64[电气工程—电力系统及自动化]