晶硅异质结(HJT)太阳电池电子接触电阻率测量  

MEARSUREMENT OF ELECTRON CONTACT RESISTIVITY OF CRYSTAL SILICON HETEROJUNCTION(HJT)SOLAR CELLS

作　　者：吴坚[1,2,3] 李硕 Wu Jian;Li Shuo(CSI Solar Co.,Cell Ltd.,Suzhou 215129,China;CSI Research Institute of Technology(Jiaxing)Co.,Ltd.,Jiaxing 314011,China;CSI Solar Co.,Ltd.,Suzhou 215129,China)

机构地区：[1]苏州阿特斯阳光电力科技有限公司,苏州215129 [2]嘉兴阿特斯技术研究院有限公司,嘉兴314011 [3]阿特斯阳光电力集团有限公司,苏州215129

出　　处：《太阳能学报》2025年第1期609-614,共6页Acta Energiae Solaris Sinica

摘　　要：对太阳电池而言,较低的接触电阻率是实现高转换效率的关键参数,特别是对于载流子选择接触的结构,比如晶硅异质结(HJT)太阳电池。接触电阻率(ρ_c)通常用Cox-Strack方法(简称CSM)或转移长度方法(TLM)计算得到。无论是哪种方法,均需要在特定金属电极图案下测得,而难于在真实的太阳电池器件中测得。对于硅基异质结(HJT)太阳电池而言,接触电阻率(ρ_c)包含银(Ag)电极与氧化铟锡(ITO)的接触电阻率ρ_(c1),以及ITO与p或n型掺杂非晶硅的隧穿接触电阻率ρ_(c2)。为此,要精确测得ρ_(c1)和ρ_(c2),需分别制备特定结构以便测量。该文提出一种新的TLM测试方法,在实际的HJT太阳电池器件上,同时测量出电子在Ag/ITO界面的接触电阻率ρ_(c1)值2.5~3.1 mΩ·cm^(2),ITO与n型掺杂非晶硅的隧穿接触电阻率ρ_(c2)值21~24 mΩ·cm^(2)。这两个值与文献报道基本一致。For solar cells,low enough contact resistivity is a key parameter for achieving high conversion efficiency,especially for carrier selective contact structures such as crystalline silicon heterojunction(HJT)solar cells.Contact resistivityρ_(c) is usually calculated by Cox Strack method(CSM)or Transfer Length Method(TLM).It is necessary to use some specific metal electrode patterns with either of the methods,which is difficult for real solar cell devices.For silicon heterojunction(HJT)solar cells,contact resistivityρ_(c) consists of the silver electrode and ITO contact resistivityρ_(c1) and the tunneling contact resistivityρ_(c2) of ITO with p-or n-type doped amorphous silicon.Therefore,it is necessary to use different specific structures for accurate measurement ofρ_(c1) andρ_(c2).In this article,we propose a new TLM method using which we could simultaneously measures the electrons contact resistivity between silver electrodes and ITOρ_(c1),as well as between ITO and n-type doped amorphous siliconρ_(c2) on actual HJT solar cell devices.The electrons contact resistivity value forρ_(c2) is 2.5-3.1 mΩ·cm^(2),and the electron tunneling contact resistivityρ_(c2) value is 21-24 mΩ·cm^(2),which are quite consistent with literature reports.

关 键 词：硅太阳电池 异质结 接触电阻 隧穿接触 电子 

分 类 号：TN36[电子电信—物理电子学]