基于螺芴吖啶类衍生物作为单组分电荷存储层的有机场效应晶体管存储器  

Organic Field-Effect Transistor Memory Based on Spiro[acridine-fluorene]Derivatives as Single Component Charge Storage Layer

作　　者：李玥 刘静[1] 魏颖[1] 凌海峰[1] 解令海[1,2] Li Yue;Liu Jing;Wei Ying;Ling Haifeng;Xie Linghai(State Key Laboratory of Organic Electronics and Information Displays,Nanjing University of Posts&Telecommunications(NUPT),Nanjing 210023,China;Henan Institute of Flexible Electronics(HIFE),Henan University,Zhengzhou 450046,China)

机构地区：[1]南京邮电大学有机电子与信息显示国家重点实验室,南京210023 [2]河南大学河南省柔性电子产业技术研究院,郑州450046

出　　处：《化学学报》2024年第12期1250-1259,共10页Acta Chimica Sinica

基　　金：国家重点研发计划青年项目(No.2021YFA0717900);国家自然科学基金(Nos.22275098,22071112)资助。

摘　　要：本工作设计并合成了以螺芴吖啶为核的两种芳胺类分子SFDBA-DCz和SFDBA-DPA,并通过溶液加工法将其作为电荷捕获层,制备了底栅顶接触型有机场效应晶体管(OFET)存储器.实验结果显示,基于SFDBA-DCz的OFET存储器件具有更高的迁移率0.35 cm^(2)·V^(-1)·s^(-1)和更高的电流开关比2.1×10^(4),但基于SFDBA-DPA的OFET存储器件具有更加优越的存储窗口.维持时间为4000 s时,基于SFDBA-DPA器件和基于SFDBA-DCz器件的开关比分别为10^(1)和10^(3).综合分析结果显示,基于SFDBA-DCz的OFET存储器件具有比基于SFDBA-DPA器件更好的器件稳定性和耐受性,但基于SFDBA-DPA的OFET存储器件具有比SFDBA-DCz器件更加优越的存储窗口.The study involved the design and synthesis of two aromatic amine molecules,SFDBA-DCz and SFDBA-DPA,based on a spiro[acridine-fluorene]core.These molecules were used as charge trapping layers by solution processing to cre ate bottom-gate-top-contact organic field-effect transistor(OFET)memories based on pentacene.Experimental results re vealed that the surface of the SFDBA-DPA thin film,when deposited with pentacene,appeared rougher,possibly due to the strong crystallinity of pure SFDBA-DPA films.This led to poor surface hydrophobicity,which hindered pentacene film growth.In contrast,the SFDBA-DCz thin film,also deposited with pentacene,exhibited relatively smooth surfaces,likely attributed to its good film-forming properties.This smooth surface showed better hydrophobicity,which facilitated pentacene film growth.Regarding device performance,the field-effect mobility(μ)for devices based on SFDBA-DPA and SFDBA-DCz were measured at 0.04 cm^(2)•V^(⁻1)•s^(⁻1)and 0.35 cm2•V^(⁻1)•s^(⁻1),respectively,with threshold voltages(Vth)recorded at 1.70 V and-1.76 V.The on/off current ratios(Ion/Ioff)were 2.3×10^(4) and 2.1×10^(4),respectively.These results indicated that devices using SFDBA-DCz exhibited higher mobility and a better current on/off ratio.Furthermore,at a write-in time of 1 s and a write-in voltage of-50 V,devices utilizing SFDBA-DPA and SFDBA-DCz displayed optimal hole storage windows of 10.5 V and 6.62 V,respectively.As the write-in time increased,the storage windows for both materials expanded,with SFDBA-DPA consistently offering a storage window approximately 4 V larger than SFDBA-DCz,regardless of the write-in duration.Under a gate electrode voltage(VDS)of 10 V,a read voltage of-5 V,and a holding time of 4000 s,the on/off ratios for devices using SFDBA-DPA and SFDBA-DCz were 101 and 103,respectively.This indicates that devices based on SFDBA-DPA had a slightly superior on/off ratio compared to those using SFDBA-DCz.A comprehensive analysis demon strated that devices employing SFDBA-DCz exh

关 键 词：螺芴吖啶基材料 OFET存储器 芳胺小分子材料 存储窗口 

分 类 号：TN3[电子电信—物理电子学]