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作 者:唐嘉 孙志成 张祖邦 罗辉[1] TANG Jia;SUN Zhicheng;ZHANG Zubang;LUO Hui(Norla Institute of Technical Physics,Chengdu 610041,China)
出 处:《人工晶体学报》2025年第1期1-10,共10页Journal of Synthetic Crystals
摘 要:由于出色的高能射线解析能力和优秀的环境适应性,全无机卤化物CsPbBr_(3)吸引了众多研究者的关注。然而由于结构相变和热应力的存在,大尺寸CsPbBr_(3)晶体生长过程中容易产生应力,从而导致晶体表面出现裂纹、亚晶界或孪晶等缺陷,严重影响其性能。目前大尺寸高质量CsPbBr_(3)晶体仍然无法通过有效的手段进行批量化生产,因此开展大尺寸CsPbBr_(3)晶体的生长与性能研究具有重大理论意义和实际价值。本文简要综述了CsPbBr_(3)晶体的基本性质、制备方法及研究进展,主要讨论了垂直布里奇曼法生长CsPbBr_(3)晶体的影响因素,并对高质量CsPbBr_(3)晶体的生长提出了新的思路。All-inorganic halide crystal CsPbBr_(3)has gained significant attention due to its outstanding high-energy ray resolution capability and excellent environmental adaptability.However,due to the presence of structural phase transitions and thermal stresses,stress is prone to arise during the growth process of large-sized CsPbBr_(3)crystals,leading to defects such as cracks on the crystal surface,subgrain boundaries and twin crystals.These defects have severely impact on the performance of CsPbBr_(3)crystals.Currently,large-sized high-quality CsPbBr_(3)still can’t be mass-produced through effective means,restricting its further application.Hence,conducting research on the growth and performance of large-sized CsPbBr_(3)crystals holds great theoretical significance and practical value.This paper briefly summarizes the fundamental properties,crystal preparation methods and research progress of CsPbBr_(3)crystals,mainly discussing the influencing factors of the vertical Bridgman growth method,and proposing novel optimization ideas for the growth of high-quality CsPbBr_(3)crystals.
关 键 词:CsPbBr_(3) 熔体法 全无机卤化物 区域熔炼 辐射探测
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