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作 者:赵青松 牛晓东 顾小英 狄聚青 ZHAO Qingsong;NIU Xiaodong;GU Xiaoying;DI Juqing(Anhui Advanced Optoelectronic Materials and Systems Industry Innovation Research Institute,Anhui Guangzhi Technology Co.,Ltd.,Chuzhou 239000,China)
机构地区:[1]安徽光智科技有限公司,安徽省先进光电子材料及系统产业创新研究院,滁州239000
出 处:《人工晶体学报》2025年第1期34-39,共6页Journal of Synthetic Crystals
基 金:2022—2023年度核能开发科研项目高纯锗能谱仪工程化技术研究(HNKF202224(28))。
摘 要:高纯锗探测器具有分辨率高、探测效率高、稳定性好等优点,应用越来越广泛,但是其关键原材料超高纯锗单晶需要满足极高的纯度和晶体结构要求,制备难度很大。国内超高纯锗单晶制备技术仍不成熟,制备的晶体质量仍不够高。利用直拉法和自制设备,在氢气气氛下生长了大尺寸的超高纯锗单晶,通过低温霍尔测试、位错测试和深能级杂质测试,对晶体性能进行了分析表征,结果表明其净载流子浓度小于1×10^(10)cm^(-3),深能级杂质浓度小于4.5×10^(9)cm^(-3),位错密度小于5000 cm^(-2),位错线数量小于3条,符合探测器级超高纯锗单晶的要求,最终得到直径85 mm和长度60 mm的合格晶体。High purity germanium detectors have the advantages of high resolution,high detection efficiency and strong stability,and their applications are becoming increasingly widespread.However,the preparation of ultra high purity germanium single crystals,the key materials for high purity germanium detectors,is challenging due to the high purity and high quality requirements.The domestic technology for preparing ultra high purity germanium single crystals is still immature,and the quality of the prepared crystals is still not high enough.In this work,large size ultra high purity germanium single crystals were grown in hydrogen atmosphere using the Czochralski method and self-made equipment.The crystal properties were analyzed through low-temperature Hall measurement,dislocation measurement,and deep level impurity measurement.The results show that the net carrier concentration of the as-grown germanium crystals is less than 1×10^(10)cm^(-3),the deep level impurity concentration is less than 4.5×10^(9)cm^(-3),the dislocation density is less than 5000 cm^(-2),and the number of dislocation array is less than 3,which meet the requirements of ultra high purity germanium detectors.Finally,qualified crystals with a diameter of 85 mm and a length of 60 mm were obtained.
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