p型TOPCon结构的隧穿氧化和钝化工艺研究  

Tunneling Oxidation and Passivation Process of p-Type TOPCon Structure

作　　者：高嘉庆 屈小勇 吴翔 郭永刚 王永冈 汪梁 谭新 杨鑫泽 GAO Jiaqing;QU Xiaoyong;WU Xiang;GUO Yonggang;WANG Yonggang;WANG Liang;TAN Xin;YANG Xinze(Xi’an Solar Power Branch,Qinghai Huanghe Hydropower Development Co.,Ltd.,Xi’an 710100,Chnia;Xining Solar Power Branch,Qinghai Huanghe Hydropower Development Co.,Ltd.,Xining 810000,Chnia)

机构地区：[1]青海黄河上游水电开发有限责任公司西安太阳能电力分公司,西安710010 [2]青海黄河上游水电开发有限责任公司西宁太阳能电力分公司,西宁810000

出　　处：《人工晶体学报》2025年第1期133-138,共6页Journal of Synthetic Crystals

基　　金：国家电投黄河上游水电开发有限责任公司科研项目(KY-C-2023-GF06)。

摘　　要：为深入研究p型TOPCon结构的制备工艺和钝化性能,本文通过实验研究了隧穿氧化层生长过程中氧气流量、氧化温度和氧化时间对氧化层质量的影响,以及在不同硼扩散温度下p-poly的钝化性能和方块电阻。实验结果表明,氧气流量达到15 slm(标准升每分钟)以上,p-poly的隐开路电压平均值达到730 mV,暗饱和电流密度低至3.5 fA/cm^(2)。氧化温度和时间分别达到620℃和30 min时,p-poly的隐开路电压可提升至735 mV;随着氧化温度的提高或者氧化时间的延长,p-poly的隐开路电压趋于稳定。硼扩散温度为960℃时,p-poly的方块电阻保持在132Ω/,硅基体中的掺杂结深为0.25μm,获得了良好的钝化性能。本文所确定的工艺参数可制备出具有良好钝化性能的p-poly结构,对未来p型TOPCon结构在高效晶硅电池上的产业化应用提供了一定的数据支撑。In order to further investigate the preparation process and passivation performance of p-type TOPCon structure,experimental investigations were conducted on the effects of oxygen flow rate,oxidation temperature,and oxidation time on the quality of oxide layer during the growth of tunnel oxide layer.Additionally,the passivation performance and sheet resistance of p-poly at different boron diffusion temperatures were also examined.The experimental results demonstrate that increasing the oxygen flow rate to 15 slm(standard liter per minute)leads to an average hidden open circuit voltage of 730 mV,and a dark saturation current density as low as 3.5 fA/cm^(2)for p-poly.Furthermore,when oxidation temperature is 620℃and oxidation time reaches 30 min,the imply open circuit voltage increases to 735 mV.It is observed that both increasing oxidation temperature and extending oxidation time tend to stabilize the imply open circuit voltage.Moreover,when maintaining a boron diffusion temperature at 960℃,a sheet resistance value of p-poly remains at 132Ω/□while achieving a dopant junction depth of 0.25μm in silicon.This configuration exhibits excellent passivation performance.The determined process parameters in this study enable the preparation of p-poly structures with superior passivation performance and provide valuable data support for future industrial applications involving P-type TOPCon structures in high-efficiency crystalline silicon cells.

关 键 词：p型TOPCon结构 低压化学气相沉积 钝化质量 隐开路电压 暗饱和电流密度 太阳能电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]