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作 者:吴伯超 彭晋卿 王蒙 WU Bochao;PENG Jinqing;WANG Meng(College of Civil Engineering,Hunan University,Changsha 410082,Hunan,China;School of Energy and Power Engineering,Changsha University of Science and Technology,Changsha 410114,Hunan,China)
机构地区:[1]湖南大学土木工程学院,湖南长沙410082 [2]长沙理工大学能源与动力工程学院,湖南长沙410114
出 处:《建筑科学》2024年第12期37-47,共11页Building Science
基 金:国家重点研发计划“薄型中空玻璃及节能外窗系统开发与应用”(2023YFC3806200);湖南省重点研发计划“内嵌斜面光栅式高效双面发电光伏幕墙的研究”(2021SK2045)。
摘 要:该文提出了1种半透明晶体硅光伏组件效率计算模型和1种简易计算方法。首先分析了从电池到组件的四类电阻并建立了从等宽电池条到光伏组件的效率损耗和电压降计算公式。然后利用自制的半透明晶体硅光伏组件,通过实验测试分析了激光切割后4 mm电池条相对于原片电池的电气参数损失情况。实验结果表明由电池到组件的过程中,因整体电路损耗在1150 mm×750 mm的组件上产生了0.573 W的功率损耗,占总组件功率的1.16%;产生了1.71 V的电压降,占总峰值电压的8.67%。基于实测数据,该文通过电池到组件因子(cell-to-module,CTM)先后从峰值功率、等效损伤宽度、填充因子(FF)等角度讨论了激光切割对晶体硅电池造成的损伤,发现激光切割对晶体硅电池的损伤主要是由于P-N结被破坏从而产生了漏电流。因此,本文提出了1种将光伏组件功率损耗近似转化为电池宽度损失的简易计算方法,以便在光伏组件制作工作中对其峰值功率进行快速计算。经验证,效率计算模型与简易计算方法的各项CTM误差均小于5%。该文提出的计算模型和简易计算方法将为简单快速地计算半透明晶体硅光伏组件发电效率提供指导和依据。In this paper,an efficiency calculation model and a simplified calculation method of semi-transparent crystalline silicon photovoltaic modules were proposed.First of all,the calculation formulas for efficiency loss and voltage drop from equivalent width cell strips to PV modules are established by analyzing four kinds of resistance from cells to modules.Then,the electrical parameter loss of 4 mm cells after laser cutting was tested and analyzed by using the home-made semi-transparent crystalline silicon photovoltaic modules.The experimental results showed that during the process from cells to modules,0.573 W power loss was generated on the 1150 mm×750 mm module due to the overall circuit loss,accounting for 1.16%of the total module power.A voltage drop of 1.71 V was generated,which accounted for 8.67%of the total peak voltage.Based on the measured data,this paper discussed the damage caused by laser cutting to crystalline silicon cells from the perspectives of peak power,equivalent width loss and the filling factor(FF)through the cell-to-module(CTM)factor.It was found that the damage caused by laser cutting to crystalline silicon cells mainly resulted from P-N junction damage generating leakage currents.Therefore,a simple calculation method was proposed to convert the power loss of photovoltaic modules into the width loss of cells,so that the peak power can be quickly calculated in the production of photovoltaic modules.It proved that the CTM errors of the efficiency are less than 5%.The calculation model and the simple calculation method presented herein will provide guidance and a basis for simple and rapid evaluation and calculation of power generation efficiency of semi-transparent crystalline silicon photovoltaic modules.
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