兼具高电致应变和居里温度的La掺杂Pb基压电陶瓷的制备  

Preparation of La⁃doped lead⁃based piezoelectric ceramics with both high electrical strain and Curie temperature

作　　者：卢铭鑫 周黎阳 许晓宇 冯晓颖 王挥 阎彬 许杰[1] 陈超 梅辉[1] 高峰[1] LU Mingxin;ZHOU Liyang;XU Xiaoyu;FENG Xiaoying;WANG Hui;YAN Bin;XU Jie;CHEN Chao;MEI Hui;GAO Feng(State Key Laboratory of Solidification Processing,School of Materials Science and Engineering,Northwestern Polytechnical University,Xi′an 710072,China;No.771 Institute,No.9 Academy,China Aerospace Science and Technology Corporation,Xi′an 710065,China)

机构地区：[1]西北工业大学材料学院,凝固技术国家重点实验室,西安710072 [2]中国航天科技集团有限公司第九研究院第七七一研究所,西安710065

出　　处：《无机化学学报》2025年第2期329-338,共10页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金(No.52272123)资助。

摘　　要：采用传统固相法制备了La^(3+)掺杂的0.28Pb(In_(1/2)Nb_(1/2))O_(3)-0.32Pb(Zn_(1/3)Nb_(2/3))O_(3)-0.3PbTiO_(3)-0.1PbZrO_(3)(PIN-PZN-PZT)四元压电陶瓷,研究了La^(3+)掺杂量对PIN-PZN-PZT四元压电陶瓷微观结构和电学性能的影响。结果表明:引入La^(3+)可以增强压电陶瓷局部结构异质性,进而提升介电弛豫特性并提高压电性能。当La_(2)O_(3)含量为1.5%时,获得了兼具高电致应变(0.23%)和高居里温度(206℃)的压电陶瓷材料。La^(3+)-doped 0.28Pb(In_(1/2)Nb_(1/2))O_(3)-0.32Pb(Zn_(1/3)Nb_(2/3))O_(3)-0.3PbTiO_(3)-0.1PbZrO_(3)(PIN-PZN-PZT)quaternary piezoelectric ceramics were prepared by the conventional solid-phase method,and the effects of La^(3+)doping on the microstructures and electrical performances of PIN-PZN-PZT quaternary piezoelectric ceramics were investigated.The results show that introducing La^(3+)can enhance the local structural heterogeneity of piezoelectric ceramics,enhancing the dielectric relaxation properties to improve the piezoelectric performance.When the La_(2)O_(3)content was 1.5%,piezoelectric ceramic materials with high electrically induced strain(0.23%)and high Curie temperature(206℃)were obtained.

关 键 词：0.28Pb(In_(1/2)Nb_(1/2))O3-0.32Pb(Zn_(1/3)Nb_(2/3))O_(3)-0.3PbTiO_(3)-0.1PbZrO_(3) 压电陶瓷 电致应变 居里温度 

分 类 号：O614.331[理学—无机化学] O614.433[理学—化学] TB34[一般工业技术—材料科学与工程]