Deep level transient spectroscopy:Tracing interface and bulk trap‐induced degradation in AlGaN/GaN‐heterostructure based devices  

作　　者：Kexin Deng Sen Huang Xinhua Wang Yixu Yao Yang Yang Li Yu Yaoyao Pei Jiayi An Qimeng Jiang Xinyu Liu Song Yang Kevin J.Chen 

机构地区：[1]High‐Frequency High‐Voltage Device and Integrated Circuits R&D Center,Institute of Microelectronics of Chinese Academy of Sciences,Beijing,China [2]University of Chinese Academy of Sciences,Beijing,China [3]Department of Electronic and Computer Engineering,Hong Kong University of Science and Technology,Kowloon,Hong Kong,China

出　　处：《Information & Functional Materials》2024年第3期282-303,共22页信息与功能材料(英文)

基　　金：National Key Research and Development Program of China,Grant/Award Number:2022YFB3604400;CAS‐Croucher Funding Scheme,Grant/Award Number:CAS22801;Beijing Municipal Science and Technology Commission,Grant/Award Numbers:Z201100008420009,Z211100007921018;University of CAS;Youth Innovation Promotion Association of the Chinese Academy of Sciences;National Natural Science Foundation of China,Grant/Award Numbers:62004213,62074161,62304252,62334012,U20A20208;IMECAS‐HKUST‐Joint Laboratory of Microelectronics。

摘　　要：The exceptional physical properties of gallium nitride(GaN)position GaNbased power devices as leading candidates for next‐generation high‐efficiency smart power conversion systems.However,GaN's multi‐component nature results in a high density of epitaxial defects,whereas the introduction of dielectric layers further contributes to severe interface states and dielectric traps.These factors collectively impair reliability,manifesting as threshold voltage instability and current collapse,which pose significant barriers to the advancement of GaN‐based electronics.Establishing the intrinsic relationship between device reliability and defects is crucial for understanding and addressing reliability degradation issue.Deep level transient spectroscopy(DLTS)offers valuable insights by revealing defect‐induced changes in electrical parameters during the capture and emission processes under varying biases,thereby elucidating the influence of defects from GaN buffer layers,AlGaN barriers,dielectric layer,and even at dielectric/(Al)GaN interfaces.This research aims to provide a foundational understanding of reliability degradation whereas further enabling enhancements in device performance from the perspectives of epitaxial growth and process preparation,ultimately striving to improve the reliability of GaN‐based devices and unlock their full potential for practical applications.

关 键 词：deep level transient spectroscopy defects device reliability gallium nitride devices 

分 类 号：TN3[电子电信—物理电子学]