The development of transfer technologies for advanced 2D circuits integration  

作　　者：Zhenggang Cai Liwei Liu Peng Zhou 

机构地区：[1]State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai,China [2]Frontier Institute of Chip and System,Fudan University,Shanghai,China

出　　处：《Information & Functional Materials》2024年第3期304-322,共19页信息与功能材料(英文)

基　　金：State Key Research and Development Program of China,Grant/Award Number:2022YFB3603902;National Natural Science Foundation of China,Grant/Award Number:62004042。

摘　　要：In the light of the scaling limitations of conventional CMOS technology,twodimensional(2D)materials offer a transformative avenue for advancing Moore's law in the post‐Moore era.The technology for transferring 2D materials serves as a crucial link between their synthesis and device integration.This review provides a comprehensive assessment of advancements in the transfer technologies and integration of 2D materials,which are essential for next‐generation electronics.Firstly,state‐of‐the‐art methodologies for highquality,wafer‐scale transfer of 2D materials,including both wet and dry transfer methods are thoroughly reviewed.And the requirements for massive transfer of 2D materials compatible with silicon line while preserving their intrinsic properties are disscussed.Next,we focus on 2D integration techniques,paying special attention to the construction of van der Waals contacts at the 2D material/dielectric interface and 2D material/metal electrode interface.Finally,the potential for layer‐by‐layer or tier‐by‐tier transfer 2D devices for monolithic 3D integration was also discussed.This review concludes by highlighting the significant challenges that remain in leveraging the potential of 2D materials at the circuit and system levels,proposing forward‐looking development in transfer strategies.

关 键 词：monolithic 3D integration transfer of 2D materials transfer of gate dielectrics transfer of metal electrodes 

分 类 号：TB3[一般工业技术—材料科学与工程]