基于磁控溅射沉积BZO/Ag/BZO透明电极的性能优化研究  

Performance optimization study of BZO/Ag/BZO transparentelectrodes based on magnetron sputtering deposition

作　　者：王露 高春联 李月婵 李秀秀 谢安 WANG Lu;GAO Chunlian;LI Yuechan;LI Xiuxiu;XIE An(Fujian Key Laboratory of Functional Materials and Applications,School of Materials Scienceand Engineering,Xiamen University of Technology,Xiamen 361024,China)

机构地区：[1]厦门理工学院材料科学与工程学院福建省功能材料及应用重点实验室,福建厦门361024

出　　处：《功能材料》2025年第1期1120-1125,1138,共7页Journal of Functional Materials

基　　金：福建省自然科学基金(2022J011266);厦门市重大科技项目(3502Z20231017);大学生创新创业训练计划项目(S202311062023)。

摘　　要：采用多步磁控溅射的方法在钠钙玻璃衬底上制备了BZO/Ag/BZO电极,分别研究金属层Ag和顶层BZO厚度对电极形貌和光电性能影响。通过优化Ag层厚度,当Ag层达到19 nm的厚度阈值时,Ag由“孤岛结构”转变为“连续结构”,为自由电子的传输提供完整的导电通路,导电性大幅度上升,电阻率下降到4.19×10^(-3)Ω·cm,在可见光区的平均透过率均达到88%。此外,在19 nm的金属Ag层基础上,通过调整电极结构中的顶层BZO厚度(32~64 nm),可以实现光干涉的相消效应,从而诱导增透效果,顶层BZO薄膜厚度为50 nm的电极是实现多层结构系统高透射率的最佳厚度,在可见光区域内平均透过率为89.85%,而在48 nm的顶层BZO厚度下,电极能提供良好支撑和导电路径,实现最低电阻率,为4.19×10-4Ω·cm。BZO/Ag/BZO electrodes were prepared on soda-lime glass substrates using a multi-step magnetron sputtering method.The effects of the thicknesses of the metal layer Ag and the top layer BZO on the morphology and optoelectronic properties of the electrodes were studied separately.By optimizing the thickness of the Ag layer,when the Ag layer reached a thickness threshold of 19 nm,the Ag changed from"island structure"to"continuous structure",providing a complete conductive path for the transmission of free electrons,significantly increasing the conductivity and reducing the resistivity to 4.19×10^(-3)Ω·cm,with an average transmittance of 88%in the visible light region.Additionally,on the basis of a 19 nm metal Ag layer,by adjusting the thickness of the top layer BZO in the electrode structure(32-64 nm),the phase cancellation effect of optical interference could be achieved,inducing an enhancement effect.The electrode with a top layer BZO film thickness of 50 nm was the optimal thickness for achieving high transmittance in a multi-layered structure system,with an average transmittance of 89.85%in the visible light region.While with a top layer BZO thickness of 48 nm,the electrode could provide good support and conductive paths,achieving the lowest resistivity of 4.19×10-4Ω·cm.

关 键 词：BZO/Ag/BZO电极 金属Ag层 厚度 导电性能 高透射率 

分 类 号：TB34[一般工业技术—材料科学与工程]