B-embedded narrowband pure near-infrared(NIR)phosphorescent iridium(Ⅲ)complexes and solution-processed OLED application  

作　　者：Fuzheng Zhang Chao Shi Jiale Li Fulin Jia Xinyu Liu Feiyang Li Xinyu Bai Qiuxia Li Aihua Yuan Guohua Xie 

机构地区：[1]School of Environmental and Chemical Engineering,Jiangsu University of Science and Technology,Zhenjiang 212003,China [2]The Institute of Flexible Electronics(Future Technologies),Xiamen University,Xiamen 361005,China

出　　处：《Chinese Chemical Letters》2025年第1期623-626,共4页中国化学快报(英文版)

基　　金：support from the National Natural Science Foundation of China(Nos.22171109,52373195 and 22001097);Natural Science Foundation of Jiangsu Province of China(No.BK20201003);the Postdoctoral Research Foundation of China(No.2021M701657);the Opening Project of Key Laboratory of Optoelectronic Chemical Materials and Devices,Ministry of Education,Jianghan University(No.JDGD-202301)。

摘　　要：Pure near-infrared(NIR)phosphorescent materials with emission peak larger than 700 nm are of great significance for the development of optoelectronics and biomedicine.We have designed and synthesized two new B-embedded pure near-infrared(NIR)-emitting iridium complexes(Ir(Bpiq)2acac and Ir(Bpiq)2dpm)with peaks greater than 720 nm.More importantly,they exhibit very narrow phosphorescent emission with full width at half maximum(FWHM)of only about 50 nm(0.12 e V),resulting in a high NIR content(>90%)in their spectrum.In view of better optical property and solubility,the complex Ir(Bpiq)_(2)dpm was used as the emitting layer of a solution-processed OLED device,and achieved good maximum external quantum efficiency(EQE)(2.8%)peaking at 728 nm.This research provides an important strategy for the design of narrowband NIR-emitting phosphorescent iridium complexes and their optoelectronic applications.

关 键 词：Iridium complex B-embedded NEAR-INFRARED OLED PHOSPHORESCENCE 

分 类 号：TN383.1[电子电信—物理电子学] O641.4[理学—物理化学]