Physics based circuit compatible model for hybrid antiferroelectric random access memory  

作　　者：Qiuxia WU Yue PENG Wenwu XIAO Wenxuan MA Shuo ZHANG Litao SUN Chunfu ZHANG Xiaohua MA Yue HAO 

机构地区：[1]School of Microelectronics,Xidian University,Xi’an 710071,China [2]Xi’an UniIC Semiconductors,Xi’an 710071,China

出　　处：《Science China(Information Sciences)》2025年第1期393-394,共2页中国科学(信息科学)(英文版)

基　　金：supported by National Natural Science Foundation of China(Grant Nos.9236410005,61534004);National Natural Science Foundation of Shaanxi Province(Grant No.2023-JC-YB-497);Fundamental Research Funds for the Central Universities(Grant No.QTZX23080);Young Elite Scientists Sponsorship Program by CAST(Grant No.2022QNRC001).

摘　　要：Since the discovery of HfO2-based ferroelectric(FE)materials in 2011,considerable advancements have been made in material preparation,mechanism research,and device realization[1].Consequently,these materials are now regarded as leading candidates for embedded non-volatile memory(eNVM).Beyond eNVM applications,recent studies have demonstrated that memory devices with antiferroelectric(AFE)films can achieve high response speeds,low latency,and reduced power consumption while maintaining excellent endurance characteristics[2,3].Additionally,the typical double hysteresis loops and multiple non-overlapping polarization current peaks of AFE films offer a novel approach to designing multistate memories.However,in order to further promote the application of high storage density AFE,an AFRAM electronic design automation(EDA)model must be developed,and it has yet to be proposed.

关 键 词：FERROELECTRIC REALIZATION RANDOM 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] TN384[自动化与计算机技术—计算机科学与技术]