Orbitronics for energy-efficient magnetization switching  

作　　者：Yuxuan YAO Daoqian ZHU Qingtao XIA Jianing LIANG Yuhao JIANG Zhiyang PENG Jiaxu LI Chen XIAO Renyou XU Wenwen WANG Xiantao SHANG Shiyang LU Dapeng ZHU Hong-Xi LIU Kaihua CAO Weisheng ZHAO 

机构地区：[1]Fert Beijing Institute,School of Integrated Circuit Science and Engineering,Beihang University,Beijing 100191,China [2]National Key Lab of Spintronics,Institute of International Innovation,Beihang University,Hangzhou 311115,China [3]Qingdao Research Institute,Beihang University,Qingdao 266000,China [4]Truth Memory Corporation,Beijing 100088,China

出　　处：《Science China(Information Sciences)》2025年第1期395-396,共2页中国科学(信息科学)(英文版)

基　　金：supported by National Key Research and Development Program of China(Grant Nos.2022YFB4400200,2022YFA1402604);National Natural Science Foundation of China(Grant Nos.92164206,52121001,62404013,T2394472,T2394474);Beijing Natural Science Foundation(Grant No.L234081);New Cornerstone Science Foundation through the XPLORER PRIZE,National Postdoctoral Program for Innovative Talents(Grant No.BX20220374);Fundamental Research Funds for the Central Universities(Grant No.KG16254501).

摘　　要：Spin-orbit torque(SOT),as a promising writing method for magnetic random-access memory(MRAM),has garnered widespread interest for over a decade[1].Heavy metals,such as β-W,have been broadly adopted as spin current sources,but suffer from phase change at a limited thickness,resulting in a dramatic reduction of the charge-tospin conversion efficiency θ_(SH)[2].The thickness limitation leads to stringent etching conditions and large distribution among devices,posing challenges for simultaneously satisfying SOT efficiency,etching-stop margins,and back-end-ofline(BEOL)compatibility.

关 键 词：satisfying ENERGY ETCHING 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]