Analysis and solution of streak effect in high dynamic range CMOS image sensors  

作　　者：Wanbin ZHA Jiangtao XU Jinghua AO Kaiming NIE Zhiyuan GAO 

机构地区：[1]School of Microelectronics,Tianjin University,Tianjin 300072,China [2]Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology,Tianjin University,Tianjin 300072,China

出　　处：《Science China(Information Sciences)》2025年第1期399-400,共2页中国科学(信息科学)(英文版)

基　　金：supported by National Science and Technology Major Project(Grant No.2021ZD0109801);National Natural Science Foundation of China(Grant Nos.62134004,62334008);Foundation of National Key Laboratory of Multispectral Information Intelligent Processing Technology(Grant No.6142113220404).

摘　　要：The high dynamic range(HDR)CMOS image sensor has been widely used in many fields,such as autonomous driving and security guarding[1].The dual conversion gain(DCG)structure,which adjusts the conversion gain(CG)by changing the capacitors connected to the floating diffusion(FD)nodes in the pixel,is an effective and prevalent method for realizing HDR imaging[2].While the DCG structure can extend the dynamic range,in the practical HDR imaging process,the substantial number of photo-generated electrons in bright areas can cause significant voltage variations in the pixel output.

关 键 词：HDR IMAGE DYNAMIC 

分 类 号：TP391.41[自动化与计算机技术—计算机应用技术] TP212[自动化与计算机技术—计算机科学与技术]