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作 者:Hong Shen Zhonghao Dongye Mian Xiao Jiayi Shao Xiangyu Zhang Yao Yao Zifan Dong Lei Qi
机构地区:[1]North China Electric Power University,Beijing,China [2]Electric Power Research Institute,State Grid Hubei Electric Power Co.,Ltd.,Wuhan,China
出 处:《High Voltage》2024年第6期1202-1207,共6页高电压(英文)
基 金:Science and Technology Project of SGCC,Grant/Award Number:5500-202422123A-1-1-ZN。
摘 要:The submodule in multilevel modular converters experiences a very fast transient over-voltage(VFTO)during switch operation of gas-insulated switchgear,which also results in overvoltage on power devices,such as thyristors and insulated gate bipolar transistors(IGBTs).This work presents an embedded circuit that utilises a gap in conjunction with a metal oxide varistor(MOV)to control the voltage of the surge arrester and prevent false triggers during the transient phase when the IGBT is turned off.The mechanism of VFTO is analysed.Moreover,the design idea is suggested and the gap-MOV circuit is constructed.Ultimately,experiments are conducted to validate the effectiveness of the suggested gap-MOV in suppressing overvoltage.
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