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作 者:程铁栋 魏锦祥 饶浩 CHENG Tiedong;WEI Jinxiang;RAO Hao(School of Electrical Engineering and Automation,Jiangxi University of Science and Technology,Ganzhou 341000,Jiangxi Province,China)
机构地区:[1]江西理工大学电气工程与自动化学院,江西赣州341000
出 处:《电子元件与材料》2024年第12期1518-1524,共7页Electronic Components And Materials
基 金:江西省科技计划联合资助项目(20192BBEL50042);江西省教育厅科学技术研究项目(GJJ200619)。
摘 要:针对传统电流型带隙基准电压源温度系数较高的问题,设计了一种新型高阶曲率补偿的带隙基准电压源。该电路在传统电流型带隙基准的基础上增加高阶补偿电路。通过工作在亚阈值区的MOS管产生栅源电压差(ΔV_(GS)),以补偿发射结电压(V_(EB)),实现了高温段补偿。同时通过工作在亚阈值区的差分对产生指数型补偿电流,将补偿电流注入到基准产生电路,实现了低温段补偿。带隙基准电压源在显著降低温度系数的同时实现了较低的功耗。电路基于SMIC 0.18μm CMOS工艺进行设计。仿真结果显示,在1.8 V电源电压下输出基准电压为574 mV,在-40~125℃范围内,温度系数为0.58×10^(-6)/℃,比传统一阶带隙基准降低了约96.2%,低频时电源抑制比为-65.9 dB,线性调整率为0.082%/V,静态电流为26.3μA。A novel high-order curvature-compensated bandgap reference voltage source was proposed to address the issue of high-temperature coefficient in the conventional current-type bandgap reference voltage sources.The proposed voltage source was based on the traditional current-type bandgap reference and a high-order compensation circuit was added.The hightemperature segment compensation was realized by generating the gate-source voltage difference(ΔV_(GS))to compensate the emitter-base voltage(V_(EB)).Meanwhile,the proposed voltage source generated an exponential compensation current through the difference pairs operating in the weak inversion region and injected it into the reference generation circuit,thus the lowtemperature segment compensation was realized.With this designed bandgap reference voltage source,lower power consumption was achieved while the temperature coefficient was significantly reduced.The circuit was designed based on the SMIC 0.18μm CMOS process.The simulation results show that the output reference voltage is 574 mV under the 1.8 V supply voltage.As a result,a temperature coefficient of 0.58×10^(-6)/℃over the temperature range from-40℃to 125℃was achieved,which is about 96.2%lower than that of the traditional first-order bandgap.In addition,the power supply rejection ratio is-65.9 dB at low frequency,the line regulation is 0.082%/V and the static current is 26.3μA.
分 类 号:TN432[电子电信—微电子学与固体电子学]
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