纳米LED远场辐射强度与出光角度的优化仿真  

Optimized Simulation of Nano-LED Far-Field Radiation Intensity and Emission Angle

作　　者：张志鹏 苏昊 李文豪 张树钱 郭焱民 龚正 郭太良[1,2] 吴朝兴 Zhang Zhipeng;Su Hao;Li Wenhao;Zhang Shuqian;Guo Yanmin;Gong Zheng;Guo Tailiang;Wu Chaoxing(College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,Fujian,China;Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350108,Fujian,China)

机构地区：[1]福州大学物理与信息工程学院,福建福州350108 [2]中国福建光电信息科学与技术创新实验室,福建福州350108

出　　处：《光学学报》2024年第22期170-178,共9页Acta Optica Sinica

基　　金：国家重点研发计划(2021YFB3600400)。

摘　　要：纳米LED有望应用于超高分辨率微型显示器件,减小纳米LED的出光角度对于降低相邻像素的光串扰具有重要意义。为了获得较小出光角度的氮化镓基纳米LED,本文采用有限元方法,研究了纳米LED形状、量子阱中氮化镓厚度,以及包裹电介质层对其远场辐射强度和出光角度的影响。仿真结果显示,柱形纳米LED结构可以实现约57°的垂直出光角度;通过调整量子阱中氮化镓的厚度为3 nm,在不影响远场强度的情况下可以进一步将垂直出光角度降低至52°。此外,在纳米LED外围包裹折射率为1.5、宽度为200~300 nm的电介质层,可以有效抑制纳米柱侧面出光,使远场强度提升40%。本研究为氮化镓基纳米LED的设计和优化提供了仿真实验支持,有望推动基于纳米LED的超高分辨率显示技术的发展。Objective Nano-light emitting diodes(nano-LEDs)offer significant potential for ultra-high-resolution display applications.A key challenge in enhancing these displays is minimizing the emission angle of nano-LEDs to reduce optical crosstalk between adjacent pixels.This study addresses this issue by investigating the influence of various parameters on the emission characteristics of GaN-based nano-LEDs.Specifically,it explores the influences of nano-LED shape,the thickness of the GaN layer in the quantum well,and the surrounding dielectric layer on far-field radiation intensity and light emission angle.The objective is to provide a comprehensive simulation-based analysis that can guide the design and optimization of nano-LEDs for improved performance in high-resolution displays.Methods The study employs the finite element method(FEM)to simulate the optical behavior of GaN-based nano-LEDs.Several parameters are adjusted to analyze their effects on emission characteristics.First,different nano-LEDs are tested to determine their influence on the emission angle.Next,the thickness of the GaN layer within the quantum well is varied.Finally,the influence of a dielectric layer encasing the nano-LED is studied.Simulations are performed to evaluate both far-field radiation intensity and the vertical emission angle under these different configurations.The parameters are systematically adjusted to identify the optimal configuration that minimizes the emission angle and enhances the far-field radiation intensity.Results and Discussions To analyze the influence of nano-LED shape on emission properties,we compare the emission effects of nano-LEDs with various top diameters(D).As shown in Figs.1(d)‒1(f),an electric field distribution for D=0,400,and 500 nm reveals that a top diameter of 500 nm results in a more focused electric field.The vertical emission angle of the cylindrical nano-LED,where the top and bottom diameters are equal,is smaller,indicating superior optical performance.Figures 1(g)‒1(i)demonstrate that the far-fi

关 键 词：纳米LED 远场辐射 出光角度优化 光学仿真 

分 类 号：O436[机械工程—光学工程]