发光可调制a-SiN_(x)O_(y) 薄膜荧光量子效率的研究  

Study on the Fluorescence Quantum Efficiency of Luminescent Modulable a-SiN_(x)O_(y)Thin Films

作　　者：张鹏展 刘鑫宇 王丹蓓 张玲 吴孔平 张冷 ZHANG Pengzhan;LIU Xinyu;WANG Danbei;ZHANG Ling;WU Kongping;ZHANG Leng(Jinling Institute of Technology,Nanjing 211169,China;Nanjing University,Nanjing 210093,China;Jiangsu Longrui Internet of Things Technology Co.,Ltd.,Nanjing 211106,China)

机构地区：[1]金陵科技学院电子信息工程学院,江苏南京211169 [2]南京大学固体微结构物理国家重点实验室,江苏南京210093 [3]江苏龙睿物联网科技有限公司,江苏南京211106

出　　处：《金陵科技学院学报》2024年第4期22-27,共6页Journal of Jinling Institute of Technology

基　　金：南京大学固体微结构物理国家重点实验室开放课题(M37080);江苏省产学研合作项目(BY20230136)。

摘　　要：使用等离子体增强化学气相沉积(PECVD)制备技术,通过精确控制硅烷氨气流量比R(SiH_(4)/NH_(3)),成功制备了可见光范围内发光高效可调制的非晶掺氧氮化硅(a-SiN_(x)O_(y),a-SiNO)荧光薄膜。首先,采用积分球直接测量了不同R值情况下a-SiNO薄膜的光致发光量子产率(PLQY),在发光波长490 nm处获得了高达(10.08±0.75)%的PLQY值,并通过拉曼光谱、傅里叶变换红外光谱(FTIR)以及X射线光电子能谱(XPS),证实了非晶态固体薄膜中存在N-Si-O键合组态及相关发光缺陷态;然后,通过精确测量a-SiNO薄膜的变温荧光光谱(TDPL)特性,详细研究并计算了变温条件下a-SiNO薄膜的PLQY值以及与之相对应的光致发光内量子效率(PLIQE);最后,讨论了a-SiNO薄膜在PLQY和PLIQE高值情况下的相关缺陷态发光机制。Efficient and modulable amorphous oxy-doped silicon nitride(a-SiN_(x)O_(y),a-SiNO)fluorescent thin films with visible light emission are successfully prepared by using plasma-enhanced chemical vapor deposition(PECVD)preparation technology and precise control of the silane ammonia flow ratio R(SiH_(4)/NH_(3)).Firstly,the photoluminescence quantum yield(PLQY)of a-SiNO thin films under different R conditions is directly measured using an integrating spheres,and a PLQY value of up to(10.08±0.75)%is obtained at a luminescence wavelength of 490 nm.Through Raman spectroscopy,Fourier transform infrared spectroscopy(FTIR),and X-ray photoelectron spectroscopy(XPS),it is confirmed that there are N-Si-O bonding configurations and related luminescent defect states in amorphous solid thin films.Then,by accurately measuring the temperature-dependent photoluminescence(TDPL)characteristics of a-SiNO films,the PLQY value of a-SiNO thin films and the corresponding photoluminescence internal quantum efficiency(PLIQE)under variable temperature conditions are studied and calculated in detail.Finally,the relevant defect state luminescence mechanism of a-SiNO thin films with high PLQY and PLIQE values is discussed.

关 键 词：发光可调制 光致发光 外量子效率 内量子效率 变温荧光光谱特性 

分 类 号：O433.1[机械工程—光学工程] TB321[理学—光学]