基于RDL-First技术的晶圆级先进封装工艺中翘曲模拟特性研究  

Research on Characteristics of Warping Simulation in Wafer-level Advanced Packaging Based on RDL-First Technology

作　　者：李奇哲 管永康 汪洋 夏晨辉 王刚 LI Qizhe;GUAN Yongkang;WANG Yang;XIA Chenhui;WANG Gang(The 58th Research Institute of CETC,Wuxi 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《电子产品可靠性与环境试验》2024年第6期34-41,共8页Electronic Product Reliability and Environmental Testing

摘　　要：以先布线层RDL-First晶圆级先进封装工艺为研究对象,基于COMSOL Multiphysics5.6仿真软件建立了先进封装结构静力学仿真模型,开展圆片翘曲应变与各参数选择的关联特性研究,以为减缓圆片内应力残留与降低圆片翘曲提供方案和设计指导。基于芯片在圆片满布的条件下,首先探讨了不同热膨胀系数的临时键合玻璃载板与圆片翘曲应变的关联特性;然后,分析了不同布线参数组合对圆片翘曲的影响;最后,探究了不同理化参数塑封料对圆片翘曲的影响。研究表明,在芯片处于满布的情况下,采用热膨胀系数越接近于体系钝化层热膨胀系数的临时键合玻璃载板和塑封料,同时布线工艺参数中钝化层厚度越薄情况下,完成封装后圆片的翘曲度最小,翘曲只有2.89 mm。Taking RDL-First wafer-level advanced packaging technology as the research object,a static simulation model of advanced packaging structure is established based on COMSOLM Multiphysics 5.6 simulation software,and the correlation characteristics between the warp strain and the selection of various parameters are studied,so as to provide a scheme and design guidance for reducing the stress residual in the wafer and reducing the warp of the wafer.Based on the condition that the chip is fully distributed,the correlation between the warpage strain of the temporary bonded glass carrier plate and the wafer with different coefficient of thermal expansion is discussed.Then,the influence of different wiring parameters on the warping of the disc is analyzed.Finally,the influence of different physicochemical parameters on the warping of the disc is explored.The research shows that in the case where the chip is fully distributed,when the temporary bonding glass carriers and plastic packaging materials with a coefficient of thermal expansion closer to that of the passivation layer in the system is used,and when the passivation layer thickness is thinner in the wiring process parameters,the warpage of the packaged wafer is the smallest,and the warpage is only 2.89 mm.

关 键 词：先布线层 晶圆级再布线 翘曲模拟 热膨胀系数 

分 类 号：TN305.94[电子电信—物理电子学]