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作 者:田方坤 符佳佳 许艳君 闫玉波 吴生虎 TIAN Fangkun;FU Jiajia;XU Yanjun;YAN Yubo;WU Shenghu(Beijing Zhenxing Institute of Metrology&Measurement,Beijing 100074,China)
出 处:《电子产品可靠性与环境试验》2024年第6期94-99,共6页Electronic Product Reliability and Environmental Testing
基 金:院质量技术基础课题(JY202311)资助。
摘 要:系统研究了瞬态电压抑制管(TVS)的失效机理及可靠性。TVS的PN结掺杂浓度低,反向击穿电压高,在响应速度、钳位电压和结电容等方面均优于同类器件。TVS的失效模式有短路、开路和电性能退化等,短路是最常见的失效模式。其失效机理在器件制备层面与芯片焊接缺陷、台面缺陷、芯片裂纹、表面积累层和掺杂不均匀等因素有关;在应用层面与过电应力、高温和过度损耗等因素有关。为规避失效风险、提高可靠性需从器件制备、应用及选型等方面进行系统的研究。The failure mechanism and reliability of transient voltage suppressor(TVS)are systematically studied.TVS has low PN junction doping concentration and high reverse breakdown voltage,and it is better than similar devices in terms of response speed,clamp voltage and junction capacitance.The failure mode of TVS includes short circuit,open circuit and electrical performance degradation,and short circuit is the most common failure mode.The failure mechanism is related to chip welding defects,table defects,chip cracks,surface accumulation layer and uneven doping at the device preparetion level,and it is related to overelectric stress,high temperature and excessive loss at the application level.In order to avoid failure risk and improve reliability,systematic research is required from device preparation,application and selection.
分 类 号:TB114.39[理学—概率论与数理统计]
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