分立GaN HEMT器件动态电阻测量系统设计  

Design of Dynamic Resistance Measurement System for Discrete GaN HEMT Devices

作　　者：文阳[1] 石孟洁 杨媛[1] 张冲 WEN Yang;SHI Meng-jie;YANG Yuan;ZHANG Chong(Xi’an University of Technology,Xi’an 710048,China)

机构地区：[1]西安理工大学,自动化与信息工程学院,陕西西安710048

出　　处：《电力电子技术》2025年第1期117-120,共4页Power Electronics

基　　金：西安市科技计划(22GXFW0076);陕西省教育厅专项科学研究计划(21JK0791)。

摘　　要：氮化镓(GaN)高电子迁移率晶体管(HEMT)在高频、高功率密度等应用领域得到广泛应用,然而GaN HEMT器件的导通电阻会随着应用工况发生改变(动态电阻现象),导致其在应用中导通损耗不能被准确评估。针对这一问题,本文设计了一种GaN HEMT器件动态电阻测量系统。首先,介绍了动态电阻测试原理,其次,介绍了该测试系统的组成并对各部分设计原理及选型进行了详细的描述。最后,搭建了GaN HEMT器件动态电阻测试系统并对测试系统性能进行了测试。结果表明,该系统可以准确地测试GaN HEMT器件在不同工况下的动态电阻值。Gallium nitride(GaN)high electron mobility transistor(HEMT)devices are widely used in high frequency,high power density and other applications.However,the on-resistance of GaN HEMT can change with the application conditions(dynamic resistance phenomenon),so that the conduct loss cannot be accurately evaluated in the applica-tion.To address this issue,a dynamic resistance measurement system for GaN HEMT devices is designed.Firstly,the principle of dynamic resistance test is presented.Then the composition of the test system,the design principle and se-lection of each part are described in detail.Finally,a dynamic resistance test system for GaN HEMT devices is built and its performance is tested.The results show that the dynamic resistance of GaN HEMT devices can be accurately measured under different working conditions.

关 键 词：高电子迁移率晶体管 动态电阻 导通电压测量 测量系统 

分 类 号：TN32[电子电信—物理电子学]